Self consistent carrier transport in band engineered HgCdTe nBn detector

N.D. Akhavan; Gilberto A. Umana-Membreno; J. Antoszweski; Lorenzo Faraone

doi:10.1109/NUSOD.2016.7547060

Self consistent carrier transport in band engineered HgCdTe nBn detector

N.D. Akhavan, Gilberto A. Umana-Membreno, J. Antoszweski, Lorenzo Faraone

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

3 Citations (Scopus)

Abstract

© 2016 IEEE.In this paper we study the influence of carrier transport under non-equilibrium condition in HgCdTe superlattice barrier detector employing self-consistent NEGF-Poisson solver. We use single-band effective mass approximation extracted from k.p envelope function to calculate dark current in the presence of applied bias. We expect the properties of superlattice barrier (doping, layer width, etc.) modify the band alignment between barrier layer and absorber layer, and consequently the dark current of band engineered HgCdTe detector will vary.

Original language	English
Title of host publication	16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016
Editors	Martijn de Sterke, Christopher Poulton, Joachim Piprek, Michael Steel
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	119-120
Number of pages	2
ISBN (Electronic)	9781467386036
ISBN (Print)	9781467386036
DOIs	https://doi.org/10.1109/NUSOD.2016.7547060
Publication status	Published - 17 Aug 2016
Event	16th International Conference on Numerical Simulation of Optoelectronic Devices: NUSOD 2016 - Sydney, Australia Duration: 11 Jul 2016 → 15 Jul 2016

Conference

Conference	16th International Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD 2016
Country/Territory	Australia
City	Sydney
Period	11/07/16 → 15/07/16

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10.1109/NUSOD.2016.7547060

Cite this

Akhavan, N. D., Umana-Membreno, G. A., Antoszweski, J., & Faraone, L. (2016). Self consistent carrier transport in band engineered HgCdTe nBn detector. In M. de Sterke, C. Poulton, J. Piprek, & M. Steel (Eds.), 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016 (pp. 119-120). Article 7547060 IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NUSOD.2016.7547060

Akhavan, N.D. ; Umana-Membreno, Gilberto A. ; Antoszweski, J. et al. / Self consistent carrier transport in band engineered HgCdTe nBn detector. 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016. editor / Martijn de Sterke ; Christopher Poulton ; Joachim Piprek ; Michael Steel. IEEE, Institute of Electrical and Electronics Engineers, 2016. pp. 119-120

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abstract = "{\textcopyright} 2016 IEEE.In this paper we study the influence of carrier transport under non-equilibrium condition in HgCdTe superlattice barrier detector employing self-consistent NEGF-Poisson solver. We use single-band effective mass approximation extracted from k.p envelope function to calculate dark current in the presence of applied bias. We expect the properties of superlattice barrier (doping, layer width, etc.) modify the band alignment between barrier layer and absorber layer, and consequently the dark current of band engineered HgCdTe detector will vary.",

author = "N.D. Akhavan and Umana-Membreno, \{Gilberto A.\} and J. Antoszweski and Lorenzo Faraone",

year = "2016",

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doi = "10.1109/NUSOD.2016.7547060",

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editor = "\{de Sterke\}, Martijn and Christopher Poulton and Joachim Piprek and Michael Steel",

booktitle = "16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

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note = "16th International Conference on Numerical Simulation of Optoelectronic Devices : NUSOD 2016, NUSOD 2016 ; Conference date: 11-07-2016 Through 15-07-2016",

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Akhavan, ND , Umana-Membreno, GA, Antoszweski, J & Faraone, L 2016, Self consistent carrier transport in band engineered HgCdTe nBn detector. in M de Sterke, C Poulton, J Piprek & M Steel (eds), 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016., 7547060, IEEE, Institute of Electrical and Electronics Engineers, pp. 119-120, 16th International Conference on Numerical Simulation of Optoelectronic Devices, Sydney, Australia, 11/07/16. https://doi.org/10.1109/NUSOD.2016.7547060

Self consistent carrier transport in band engineered HgCdTe nBn detector. / Akhavan, N.D.; Umana-Membreno, Gilberto A.; Antoszweski, J. et al.
16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016. ed. / Martijn de Sterke; Christopher Poulton; Joachim Piprek; Michael Steel. IEEE, Institute of Electrical and Electronics Engineers, 2016. p. 119-120 7547060.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

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T1 - Self consistent carrier transport in band engineered HgCdTe nBn detector

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AU - Umana-Membreno, Gilberto A.

AU - Antoszweski, J.

AU - Faraone, Lorenzo

PY - 2016/8/17

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N2 - © 2016 IEEE.In this paper we study the influence of carrier transport under non-equilibrium condition in HgCdTe superlattice barrier detector employing self-consistent NEGF-Poisson solver. We use single-band effective mass approximation extracted from k.p envelope function to calculate dark current in the presence of applied bias. We expect the properties of superlattice barrier (doping, layer width, etc.) modify the band alignment between barrier layer and absorber layer, and consequently the dark current of band engineered HgCdTe detector will vary.

AB - © 2016 IEEE.In this paper we study the influence of carrier transport under non-equilibrium condition in HgCdTe superlattice barrier detector employing self-consistent NEGF-Poisson solver. We use single-band effective mass approximation extracted from k.p envelope function to calculate dark current in the presence of applied bias. We expect the properties of superlattice barrier (doping, layer width, etc.) modify the band alignment between barrier layer and absorber layer, and consequently the dark current of band engineered HgCdTe detector will vary.

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DO - 10.1109/NUSOD.2016.7547060

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PB - IEEE, Institute of Electrical and Electronics Engineers

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Akhavan ND , Umana-Membreno GA, Antoszweski J, Faraone L. Self consistent carrier transport in band engineered HgCdTe nBn detector. In de Sterke M, Poulton C, Piprek J, Steel M, editors, 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016. IEEE, Institute of Electrical and Electronics Engineers. 2016. p. 119-120. 7547060 doi: 10.1109/NUSOD.2016.7547060

Self consistent carrier transport in band engineered HgCdTe nBn detector

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