Schottky gate effects on transport properties of Al0.35Ga0.65N/GaN heterostructures

A. Asgari, M. Kalafi, Lorenzo Faraone

    Research output: Contribution to journalArticle


    The effects of the Schottky gate on transport properties of Al0.35Ga0.65N/GaN heterostructure-based high electron mobility transistor parameters such as the two-dimensional electron gas density, two-dimensional electron mobility and current–voltage characteristics were determined by using exact numerical methods including transferred electron effects from 2-dimensional to 3-dimensional states. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
    Original languageEnglish
    Pages (from-to)2333-2337
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Issue number6
    Publication statusPublished - 2006


    Cite this