Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

Martin Kocan, Gilberto A. Umana-Membreno, Matt Kilburn, I.R. Fletcher, F. Recht, L. Mccarthy, Umesh Mishra, Brett Nener, Giacinta Parish

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper reports results of scanning ion probe studies of silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non-implanted regions become wider with increasing depth in the structure. These results may explain the previously reported existence of resistance associated with the transition region between implanted and non-implanted semiconductor regions in AlGaN/GaN HEMT heterostructures with non-alloyed Si-implanted source and drain ohmic contact regions.
Original languageEnglish
Pages (from-to)554-557
JournalJournal of Electronic Materials
Volume37
Issue number5
DOIs
Publication statusPublished - 2008

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