Room-Temperature Dual-mode CMOS Gas-FET Sensor for Diabetes Detection

Qian Yu, Farid Boussaid, Amine Bermak, Chi Ying Tsui

Research output: Chapter in Book/Conference paperConference paper

1 Citation (Scopus)

Abstract

A CMOS gas-sensitive field-effect transistor (Gas-FET) is proposed for noninvasive diabetes detection. The Gas-FET was fabricated in the GlobalFoundries 0.18μm 1P6M process with a lateral control gate and a floating gate to set operating point and gas sensing sensitivity, respectively. ZnO nanorods were used as the sensing material and deposited on top of the chip using a hydrothermal process at 80°C. Room-temperature acetone sensing down to sub-ppm level is demonstrated to enable noninvasive diagnosis of diabetes in exhaled breath. A dual-mode integrated readout circuit is also proposed to improve the sensor gas discrimination ability through the acquisition of 2-dimensional information by every single Gas-FET sensor.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
PublisherIEEE, Institute of Electrical and Electronics Engineers
Volume2018-May
ISBN (Electronic)9781538648810
DOIs
Publication statusPublished - 26 Apr 2018
Event2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Firenze Fiera Congress and Exhibition Center, Florence, Italy
Duration: 27 May 201830 May 2018

Conference

Conference2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
CountryItaly
CityFlorence
Period27/05/1830/05/18

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