RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability

John Dell; Jarek Antoszewski; J.K. White; R. Pal; T. Nguyen; Charles Musca; Lorenzo Faraone

RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability

John Dell, Jarek Antoszewski, J.K. White, R. Pal, T. Nguyen, Charles Musca, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of SPIE - Materials for Infrared Detectors
Editors	R.E. Longshore
Place of Publication	USA
Publisher	SPIE
Pages	106-115
Volume	4454
Edition	San Diego, CA, USA
ISBN (Print)	0819441686
Publication status	Published - 2001
Event	RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability - San Diego, CA, USA Duration: 1 Jan 2001 → …

Conference

Conference	RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability
Period	1/01/01 → …

Cite this

@inproceedings{b96ebdef8b4341f1acacdd83f6cea43c,

title = "RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability",

author = "John Dell and Jarek Antoszewski and J.K. White and R. Pal and T. Nguyen and Charles Musca and Lorenzo Faraone",

year = "2001",

language = "English",

isbn = "0819441686",

volume = "4454",

pages = "106--115",

editor = "R.E. Longshore",

booktitle = "Proceedings of SPIE - Materials for Infrared Detectors",

publisher = "SPIE",

address = "United States",

edition = "San Diego, CA, USA",

note = "RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability ; Conference date: 01-01-2001",

}

Dell, J , Antoszewski, J, White, JK, Pal, R, Nguyen, T, Musca, C & Faraone, L 2001, RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability. in RE Longshore (ed.), Proceedings of SPIE - Materials for Infrared Detectors. San Diego, CA, USA edn, vol. 4454, SPIE, USA, pp. 106-115, RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability, 1/01/01.

RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability. / Dell, John ; Antoszewski, Jarek; White, J.K. et al.
Proceedings of SPIE - Materials for Infrared Detectors. ed. / R.E. Longshore. Vol. 4454 San Diego, CA, USA. ed. USA: SPIE, 2001. p. 106-115.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability

AU - Dell, John

AU - Antoszewski, Jarek

AU - White, J.K.

AU - Pal, R.

AU - Nguyen, T.

AU - Musca, Charles

AU - Faraone, Lorenzo

PY - 2001

Y1 - 2001

M3 - Conference paper

SN - 0819441686

VL - 4454

SP - 106

EP - 115

BT - Proceedings of SPIE - Materials for Infrared Detectors

A2 - Longshore, R.E.

PB - SPIE

CY - USA

T2 - RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability

Y2 - 1 January 2001

ER -