RIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability

John Dell, Jarek Antoszewski, J.K. White, R. Pal, T. Nguyen, Charles Musca, Lorenzo Faraone

Research output: Chapter in Book/Conference paperConference paper

3 Citations (Scopus)
Original languageEnglish
Title of host publicationProceedings of SPIE - Materials for Infrared Detectors
EditorsR.E. Longshore
Place of PublicationUSA
PublisherSPIE
Pages106-115
Volume4454
EditionSan Diego, CA, USA
ISBN (Print)0819441686
Publication statusPublished - 2001
EventRIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability - San Diego, CA, USA
Duration: 1 Jan 2001 → …

Conference

ConferenceRIE induced n-on p junction HgCdTe photodiodes: effects of passivant technology on bake stability
Period1/01/01 → …

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