Responsivity and lifetime of resonant-cavity-enhanced HgCdTe detectors

J.G. Wehner, Charles Musca, Richard Sewell, John Dell, Lorenzo Faraone

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11 Citations (Scopus)


Resonant-cavity-enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Responsivity has been measured and shows a peak responsivity of 8 x 10(4) V/W for a 50 x 50 mu m 2 photoconductor at a temperature of 200 K. The measured responsivity shows some agreement with the modelled responsivity across the mid-wave infrared window (3-5 mu m). The measured responsivity is limited by surface recombination, which limits the effective lifetime to approximate to 15 ns. The optical cut-off of the detector varies with temperature as modelled from 5.1 ltm at 80 K to 4.4 mu m at 250 K. There is strong agreement between modelled peak responsivity and measured peak responsivity with varying temperature from 80 to 300 K. (C) 2006 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1640-1648
JournalSolid-State Electronics
Issue number9-10
Publication statusPublished - 2006


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