Abstract
Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Responsivity has been measured and shows a peak responsivity of 8 × 104 V/W for a 50 × 50 μm2 photoconductor at a temperature of 200K. The measured responsivity shows good agreement with the modelled responsivity across the midwave infrared window (3-5 μm). The measured responsivity is limited by surface recombination, which limits the effective lifetime to ≈ 15ns. The optical cut-off of the detector varies with temperature as modelled. There is strong agreement between modelled peak responsivity and measured peak responsivity with varying temperature from 80-300K. © 2006 IEEE.
Original language | English |
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Title of host publication | IEEE Aerospace Conference Proceedings |
Place of Publication | United States of America |
Publisher | IEEE, Institute of Electrical and Electronics Engineers |
Chapter | 1655909 |
Volume | Not applicable |
Edition | Big Sky, Montana, USA |
ISBN (Print) | 078039545X |
Publication status | Published - 2006 |
Event | 2006 IEEE Aerospace Conference - Big Sky, Big Sky, United States Duration: 4 Mar 2006 → 11 Mar 2006 |
Conference
Conference | 2006 IEEE Aerospace Conference |
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Country/Territory | United States |
City | Big Sky |
Period | 4/03/06 → 11/03/06 |