Responsivity and Lifetime of Resonant-cavity enhanced HgCdTe detectors

J.G. Wehner, Charles Musca, Richard Sewell, John Dell, Lorenzo Faraone

Research output: Chapter in Book/Conference paperConference paperpeer-review

Abstract

Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Responsivity has been measured and shows a peak responsivity of 8 × 104 V/W for a 50 × 50 μm2 photoconductor at a temperature of 200K. The measured responsivity shows good agreement with the modelled responsivity across the midwave infrared window (3-5 μm). The measured responsivity is limited by surface recombination, which limits the effective lifetime to ≈ 15ns. The optical cut-off of the detector varies with temperature as modelled. There is strong agreement between modelled peak responsivity and measured peak responsivity with varying temperature from 80-300K. © 2006 IEEE.
Original languageEnglish
Title of host publicationIEEE Aerospace Conference Proceedings
Place of PublicationUnited States of America
PublisherIEEE, Institute of Electrical and Electronics Engineers
Chapter1655909
VolumeNot applicable
EditionBig Sky, Montana, USA
ISBN (Print)078039545X
Publication statusPublished - 2006
Event2006 IEEE Aerospace Conference - Big Sky, Big Sky, United States
Duration: 4 Mar 200611 Mar 2006

Conference

Conference2006 IEEE Aerospace Conference
Country/TerritoryUnited States
CityBig Sky
Period4/03/0611/03/06

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