Original language | English |
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Pages (from-to) | 1-2 |
Journal | Journal of Applied Physics |
Volume | 115 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2014 |
Response to "comment on 'A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb type-II superlattices'" [J. Appl. Phys. 115, 146101 (2014)]
S. Safa, A. Asgari, Lorenzo Faraone
Research output: Contribution to journal › Letter