Response to "comment on 'A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb type-II superlattices'" [J. Appl. Phys. 115, 146101 (2014)]

S. Safa, A. Asgari, Lorenzo Faraone

    Research output: Contribution to journalLetter

    Original languageEnglish
    Pages (from-to)1-2
    JournalJournal of Applied Physics
    Issue number14
    Publication statusPublished - 2014

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