Released micromachined beams utilizing laterally uniform porosity porous silicon

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    Abstract

    © 2014, Sun et al.; licensee Springer. Abstract: Suspended micromachined porous silicon beams with laterally uniform porosity are reported, which have been fabricated using standard photolithography processes designed for compatibility with complementary metal-oxide-semiconductor (CMOS) processes. Anodization, annealing, reactive ion etching, repeated photolithography, lift off and electropolishing processes were used to release patterned porous silicon microbeams on a Si substrate. This is the first time that micromachined, suspended PS microbeams have been demonstrated with laterally uniform porosity, well-defined anchors and flat surfaces. PACS: 81.16.-c; 81.16.Nd; 81.16.Rf
    Original languageEnglish
    Number of pages7
    Journal Nanoscale Research Letters
    Volume9
    DOIs
    Publication statusPublished - 22 Aug 2014

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    microbeams
    Porous silicon
    Photolithography
    photolithography
    porous silicon
    Porosity
    electropolishing
    porosity
    Electrolytic polishing
    Picture archiving and communication systems
    Reactive ion etching
    Anchors
    compatibility
    flat surfaces
    CMOS
    Metals
    etching
    Annealing
    annealing
    Substrates

    Cite this

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    title = "Released micromachined beams utilizing laterally uniform porosity porous silicon",
    abstract = "{\circledC} 2014, Sun et al.; licensee Springer. Abstract: Suspended micromachined porous silicon beams with laterally uniform porosity are reported, which have been fabricated using standard photolithography processes designed for compatibility with complementary metal-oxide-semiconductor (CMOS) processes. Anodization, annealing, reactive ion etching, repeated photolithography, lift off and electropolishing processes were used to release patterned porous silicon microbeams on a Si substrate. This is the first time that micromachined, suspended PS microbeams have been demonstrated with laterally uniform porosity, well-defined anchors and flat surfaces. PACS: 81.16.-c; 81.16.Nd; 81.16.Rf",
    author = "Xiao Sun and Adrian Keating and Giacinta Parish",
    year = "2014",
    month = "8",
    day = "22",
    doi = "10.1186/1556-276X-9-426",
    language = "English",
    volume = "9",
    journal = "Nanoscale Research Letters",
    issn = "1556-276X",
    publisher = "Springer",

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    TY - JOUR

    T1 - Released micromachined beams utilizing laterally uniform porosity porous silicon

    AU - Sun, Xiao

    AU - Keating, Adrian

    AU - Parish, Giacinta

    PY - 2014/8/22

    Y1 - 2014/8/22

    N2 - © 2014, Sun et al.; licensee Springer. Abstract: Suspended micromachined porous silicon beams with laterally uniform porosity are reported, which have been fabricated using standard photolithography processes designed for compatibility with complementary metal-oxide-semiconductor (CMOS) processes. Anodization, annealing, reactive ion etching, repeated photolithography, lift off and electropolishing processes were used to release patterned porous silicon microbeams on a Si substrate. This is the first time that micromachined, suspended PS microbeams have been demonstrated with laterally uniform porosity, well-defined anchors and flat surfaces. PACS: 81.16.-c; 81.16.Nd; 81.16.Rf

    AB - © 2014, Sun et al.; licensee Springer. Abstract: Suspended micromachined porous silicon beams with laterally uniform porosity are reported, which have been fabricated using standard photolithography processes designed for compatibility with complementary metal-oxide-semiconductor (CMOS) processes. Anodization, annealing, reactive ion etching, repeated photolithography, lift off and electropolishing processes were used to release patterned porous silicon microbeams on a Si substrate. This is the first time that micromachined, suspended PS microbeams have been demonstrated with laterally uniform porosity, well-defined anchors and flat surfaces. PACS: 81.16.-c; 81.16.Nd; 81.16.Rf

    U2 - 10.1186/1556-276X-9-426

    DO - 10.1186/1556-276X-9-426

    M3 - Article

    VL - 9

    JO - Nanoscale Research Letters

    JF - Nanoscale Research Letters

    SN - 1556-276X

    ER -