Released all-porous-silicon microstructure for spectrometer applications

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Abstract

All-porous-silicon microstructures have been released with in-situ controllable current density to achieve low residual stress and out-of-plane stress gradient in the porous silicon (PS) films. Optical transmission of large area released PS structures was investigated through both Fourier-transform infrared spectroscopy (FTIR) and modelling in the near infrared and mid infrared wavelength range.
Original languageEnglish
Publication statusPublished - 2018
Event2018 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, Australia
Duration: 9 Dec 201813 Dec 2018

Conference

Conference2018 Conference on Optoelectronic and Microelectronic Materials and Devices
CountryAustralia
CityPerth
Period9/12/1813/12/18

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