Reduction of Microwave dielectric losses in KTa1-xNbxO3 thin films by MgO-doping

Q. Simon; V. Bouquet; W. Peng; Jean-Michel Le Floch; F. Houndonoughbo; S. Deputier; S. Weber; A. Dausher; V. Madranageas; D. Cros; M. Guilloux-Viry

doi:10.1016/j.tsf.2009.04.022

Reduction of Microwave dielectric losses in KTa1-xNbxO3 thin films by MgO-doping

Q. Simon, V. Bouquet, W. Peng, Jean-Michel Le Floch, F. Houndonoughbo, S. Deputier, S. Weber, A. Dausher, V. Madranageas, D. Cros, M. Guilloux-Viry

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Abstract

KTa1−xNbxO3 (KTN) thin films were grown by pulsed laser deposition on sapphire and MgO substrates. Theirstructural and high frequency dielectric characteristics evidenced the strong influence of the substrate andsuggested possible KTN/MgO interdiffusion that could be responsible for the lower dielectric losses obtained onthis substrate. Both undoped and 6% MgO-doped KTN thin films were then grown on sapphire. Dielectricmeasurements performed at 12.5 GHz by a resonant cavity perturbationmethod evidenced reduction of losses byMgO-doping. Loss tangent (tan δ) was reduced by a factor of 3 in comparison with undoped films grown onsapphire.© 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	5940-5942
Journal	Thin Solid Films
Volume	517
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2009.04.022
Publication status	Published - 2009

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10.1016/j.tsf.2009.04.022

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@article{ca17d9354534493fb1a79882c74aa45b,

title = "Reduction of Microwave dielectric losses in KTa1-xNbxO3 thin films by MgO-doping",

abstract = "KTa1−xNbxO3 (KTN) thin films were grown by pulsed laser deposition on sapphire and MgO substrates. Theirstructural and high frequency dielectric characteristics evidenced the strong influence of the substrate andsuggested possible KTN/MgO interdiffusion that could be responsible for the lower dielectric losses obtained onthis substrate. Both undoped and 6% MgO-doped KTN thin films were then grown on sapphire. Dielectricmeasurements performed at 12.5 GHz by a resonant cavity perturbationmethod evidenced reduction of losses byMgO-doping. Loss tangent (tan δ) was reduced by a factor of 3 in comparison with undoped films grown onsapphire.{\textcopyright} 2009 Elsevier B.V. All rights reserved.",

author = "Q. Simon and V. Bouquet and W. Peng and {Le Floch}, Jean-Michel and F. Houndonoughbo and S. Deputier and S. Weber and A. Dausher and V. Madranageas and D. Cros and M. Guilloux-Viry",

year = "2009",

doi = "10.1016/j.tsf.2009.04.022",

language = "English",

volume = "517",

pages = "5940--5942",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "20",

}

TY - JOUR

T1 - Reduction of Microwave dielectric losses in KTa1-xNbxO3 thin films by MgO-doping

AU - Simon, Q.

AU - Bouquet, V.

AU - Peng, W.

AU - Le Floch, Jean-Michel

AU - Houndonoughbo, F.

AU - Deputier, S.

AU - Weber, S.

AU - Dausher, A.

AU - Madranageas, V.

AU - Cros, D.

AU - Guilloux-Viry, M.

PY - 2009

Y1 - 2009

N2 - KTa1−xNbxO3 (KTN) thin films were grown by pulsed laser deposition on sapphire and MgO substrates. Theirstructural and high frequency dielectric characteristics evidenced the strong influence of the substrate andsuggested possible KTN/MgO interdiffusion that could be responsible for the lower dielectric losses obtained onthis substrate. Both undoped and 6% MgO-doped KTN thin films were then grown on sapphire. Dielectricmeasurements performed at 12.5 GHz by a resonant cavity perturbationmethod evidenced reduction of losses byMgO-doping. Loss tangent (tan δ) was reduced by a factor of 3 in comparison with undoped films grown onsapphire.© 2009 Elsevier B.V. All rights reserved.

AB - KTa1−xNbxO3 (KTN) thin films were grown by pulsed laser deposition on sapphire and MgO substrates. Theirstructural and high frequency dielectric characteristics evidenced the strong influence of the substrate andsuggested possible KTN/MgO interdiffusion that could be responsible for the lower dielectric losses obtained onthis substrate. Both undoped and 6% MgO-doped KTN thin films were then grown on sapphire. Dielectricmeasurements performed at 12.5 GHz by a resonant cavity perturbationmethod evidenced reduction of losses byMgO-doping. Loss tangent (tan δ) was reduced by a factor of 3 in comparison with undoped films grown onsapphire.© 2009 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.tsf.2009.04.022

DO - 10.1016/j.tsf.2009.04.022

M3 - Article

SN - 0040-6090

VL - 517

SP - 5940

EP - 5942

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

ER -

Reduction of Microwave dielectric losses in KTa1-xNbxO3 thin films by MgO-doping

Abstract

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