Reduced electric field in junctionless transistors

Jean-Pierre Colinge, Chi-Woo Lee, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Alexei N. Nazarov, Rodrigo T. Doriac

Research output: Contribution to journalArticle

225 Citations (Scopus)


The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility in metal-oxide-semionductor transistors is reduced by this electric field, the low field in junctionless transistor may give them an advantage in terms of current drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement is present.

Original languageEnglish
Article number073510
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 15 Feb 2010

Cite this

Colinge, J-P., Lee, C-W., Ferain, I., Akhavan, N. D., Yan, R., Razavi, P., Yu, R., Nazarov, A. N., & Doriac, R. T. (2010). Reduced electric field in junctionless transistors. Applied Physics Letters, 96(7), [073510].