Recent progress in MBE grown HgCdTe materials and devices at UWA

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4 Citations (Scopus)


© 2016 SPIE.HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.
Original languageEnglish
Title of host publicationProceedings of SPIE: Infrared Technology and Applications XLII
EditorsPaul R. Norton, Charles M. Hanson, Gabor F. Fulop, Bjorn F. Andresen
ISBN (Electronic)9781510600607
ISBN (Print)9781510600607
Publication statusPublished - 2016
EventInfrared Technology and Applications XLII - Baltimore, United States
Duration: 18 Apr 201621 Apr 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceInfrared Technology and Applications XLII
Country/TerritoryUnited States


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