Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

Charles Musca, E.P.G. Smith, J.F. Siliquini, John Dell, Jarek Antoszewski, J. Piotrowski

Research output: Chapter in Book/Conference paperConference paper

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings Volume 484
EditorsD.L. Jr McDaniel, M.O. Manasreh, R.H. Miles, S. Sivananthan
Place of PublicationWarrendale, Pennsylvania, USA
PublisherMaterials Research Society
Pages353-358
Volume484
EditionBoston, Massachusetts, USA
Publication statusPublished - 1998
EventReactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe - Boston, Massachusetts, USA
Duration: 1 Jan 1998 → …

Conference

ConferenceReactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe
Period1/01/98 → …

Cite this

Musca, C., Smith, E. P. G., Siliquini, J. F., Dell, J., Antoszewski, J., & Piotrowski, J. (1998). Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe. In D. L. J. McDaniel, M. O. Manasreh, R. H. Miles, & S. Sivananthan (Eds.), Materials Research Society Symposium Proceedings Volume 484 (Boston, Massachusetts, USA ed., Vol. 484, pp. 353-358). Warrendale, Pennsylvania, USA: Materials Research Society.