Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

Charles Musca; E.P.G. Smith; J.F. Siliquini; John Dell; Jarek Antoszewski; J. Piotrowski

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

Charles Musca, E.P.G. Smith, J.F. Siliquini, John Dell, Jarek Antoszewski, J. Piotrowski

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings Volume 484
Editors	D.L. Jr McDaniel, M.O. Manasreh, R.H. Miles, S. Sivananthan
Place of Publication	Warrendale, Pennsylvania, USA
Publisher	Materials Research Society
Pages	353-358
Volume	484
Edition	Boston, Massachusetts, USA
Publication status	Published - 1998
Event	Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe - Boston, Massachusetts, USA Duration: 1 Jan 1998 → …

Conference

Conference	Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe
Period	1/01/98 → …

Cite this

Musca, C., Smith, E. P. G., Siliquini, J. F., Dell, J., Antoszewski, J., & Piotrowski, J. (1998). Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe. In D. L. J. McDaniel, M. O. Manasreh, R. H. Miles, & S. Sivananthan (Eds.), Materials Research Society Symposium Proceedings Volume 484 (Boston, Massachusetts, USA ed., Vol. 484, pp. 353-358). Materials Research Society.

Musca, Charles ; Smith, E.P.G. ; Siliquini, J.F. et al. / Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe. Materials Research Society Symposium Proceedings Volume 484. editor / D.L. Jr McDaniel ; M.O. Manasreh ; R.H. Miles ; S. Sivananthan. Vol. 484 Boston, Massachusetts, USA. ed. Warrendale, Pennsylvania, USA : Materials Research Society, 1998. pp. 353-358

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title = "Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe",

author = "Charles Musca and E.P.G. Smith and J.F. Siliquini and John Dell and Jarek Antoszewski and J. Piotrowski",

year = "1998",

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pages = "353--358",

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booktitle = "Materials Research Society Symposium Proceedings Volume 484",

publisher = "Materials Research Society",

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note = "Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe ; Conference date: 01-01-1998",

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Musca, C, Smith, EPG, Siliquini, JF, Dell, J , Antoszewski, J & Piotrowski, J 1998, Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe. in DLJ McDaniel, MO Manasreh, RH Miles & S Sivananthan (eds), Materials Research Society Symposium Proceedings Volume 484. Boston, Massachusetts, USA edn, vol. 484, Materials Research Society, Warrendale, Pennsylvania, USA, pp. 353-358, Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe, 1/01/98.

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe. / Musca, Charles; Smith, E.P.G.; Siliquini, J.F. et al.
Materials Research Society Symposium Proceedings Volume 484. ed. / D.L. Jr McDaniel; M.O. Manasreh; R.H. Miles; S. Sivananthan. Vol. 484 Boston, Massachusetts, USA. ed. Warrendale, Pennsylvania, USA: Materials Research Society, 1998. p. 353-358.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

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AU - Musca, Charles

AU - Smith, E.P.G.

AU - Siliquini, J.F.

AU - Dell, John

AU - Antoszewski, Jarek

AU - Piotrowski, J.

PY - 1998

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M3 - Conference paper

VL - 484

SP - 353

EP - 358

BT - Materials Research Society Symposium Proceedings Volume 484

A2 - McDaniel, D.L. Jr

A2 - Manasreh, M.O.

A2 - Miles, R.H.

A2 - Sivananthan, S.

PB - Materials Research Society

CY - Warrendale, Pennsylvania, USA

T2 - Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

Y2 - 1 January 1998

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Musca C, Smith EPG, Siliquini JF, Dell J , Antoszewski J, Piotrowski J. Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe. In McDaniel DLJ, Manasreh MO, Miles RH, Sivananthan S, editors, Materials Research Society Symposium Proceedings Volume 484. Boston, Massachusetts, USA ed. Vol. 484. Warrendale, Pennsylvania, USA: Materials Research Society. 1998. p. 353-358