@inproceedings{5759f5504a7c4df8a336ac2578aa205e,
title = "Reactive ion etching of porous silicon for MEMS applications",
abstract = "Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O-2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.",
author = "Lai, {M. F.} and G. Parish and Liu, {Y. N.} and Keating, {A. J.}",
year = "2010",
doi = "10.1109/COMMAD.2010.5699721",
language = "English",
isbn = "9781424473328",
volume = "1",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices",
publisher = "IEEE, Institute of Electrical and Electronics Engineers",
pages = "169--170",
booktitle = "Proceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices",
address = "United States",
note = "Reactive ion etching pf porous silicon for MEMS applications ; Conference date: 01-01-2010",
}