Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O-2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.
|Title of host publication||Proceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices|
|Place of Publication||USA|
|Publisher||IEEE, Institute of Electrical and Electronics Engineers|
|Number of pages||2|
|Publication status||Published - 2010|
|Name||Conference on Optoelectronic and Microelectronic Materials and Devices|