Reactive ion etching of porous silicon for MEMS applications

Research output: Chapter in Book/Conference paperConference paper

Abstract

Dry etching by inductively-coupled-plasma reactive-ion etching was performed on porous silicon. When etching with a gas mixture of CF4 and O-2, the etch rates of passivated PS were higher than that of Si by a factor of up to 20. It is found that the etch rate of PS is affected by the several seconds of plasma initialisation and stabilisation time.
Original languageEnglish
Title of host publicationProceedings of 2010 Conference on Optoelectronic and Microelectronic Materials and Devices
Place of PublicationUSA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages169-170
Number of pages2
DOIs
Publication statusPublished - 2010

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices

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