Random Dopant Variation in Junctionless nanowire Transistors

Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi, Ran Yu, Jean-Pierre Colinge

Research output: Chapter in Book/Conference paperConference paperpeer-review

17 Citations (Scopus)


In this article we study the influence of random dopant variation in junctionless nanowire transistor using numerical modelling. Simulations have been carried out by three-dimensional quantum simulator based on Non-equilibrium Green's function formalism. The simulations reveal that junctionless nanowire transistor suffers less variation in subthreshold region due to random dopant distribution compare to the conventional inversion mode counterpart. This improved behaviour arises from uniform distribution of ionized dopant in the channel under the gate and in the source/drain regions.

Original languageEnglish
Title of host publication2011 IEEE INTERNATIONAL SOI CONFERENCE
PublisherWiley-IEEE Press
Number of pages2
Publication statusPublished - 2011
EventIEEE International SOI Conference - Tempe, Azerbaijan
Duration: 3 Oct 20116 Oct 2011

Publication series

NameIEEE International SOI Conference
ISSN (Print)1078-621X


ConferenceIEEE International SOI Conference


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