Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

T. Li; L. Gao; Wen Lei; L. Guo; T. Yang; Y. Chen; Z. Wang

doi:10.1186/1556-276X-8-27

Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

T. Li, L. Gao, Wen Lei, L. Guo, T. Yang, Y. Chen, Z. Wang

Research output: Contribution to journal › Article › peer-review

32 Citations (Web of Science)

Abstract

We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules. © 2013 Li et al.; licensee Springer.

Original language	English
Pages (from-to)	1-7
Journal	Nanoscale Research Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-8-27
Publication status	Published - 2013

Access to Document

10.1186/1556-276X-8-27

Cite this

@article{1b3a6cb3a0cb44eab427c4144bfacb46,

title = "Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate",

abstract = "We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules. {\textcopyright} 2013 Li et al.; licensee Springer.",

author = "T. Li and L. Gao and Wen Lei and L. Guo and T. Yang and Y. Chen and Z. Wang",

year = "2013",

doi = "10.1186/1556-276X-8-27",

language = "English",

volume = "8",

pages = "1--7",

journal = " Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer",

number = "1",

}

TY - JOUR

T1 - Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

AU - Li, T.

AU - Gao, L.

AU - Lei, Wen

AU - Guo, L.

AU - Yang, T.

AU - Chen, Y.

AU - Wang, Z.

PY - 2013

Y1 - 2013

N2 - We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules. © 2013 Li et al.; licensee Springer.

AB - We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules. © 2013 Li et al.; licensee Springer.

U2 - 10.1186/1556-276X-8-27

DO - 10.1186/1556-276X-8-27

M3 - Article

C2 - 23316901

SN - 1931-7573

VL - 8

SP - 1

EP - 7

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

ER -

Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate

Abstract

Access to Document

Fingerprint

Cite this