Quantitative Mobility Spectrum Analysis of Multicarrier conduction in Semiconductors

J.R. Meyer, C.A. Hoffman, Jarek Antoszewski, Lorenzo Faraone

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    56 Citations (Scopus)

    Abstract

    We demonstrate an optimized quantitative mobility spectrum analysis (QMSA) technique for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity data. The procedure is applied to an In1-xGaxAs-In1-xAlxAs single quantum well, GaAs-AlAs asymmetric double quantum wells, and Hg1-xCdxTe epitaxial thin films containing multiple carrier species. The results illustrate the reliability, versatility, and sensitivity of the analysis, which is fully computer automated following input of the magnetic-field-dependent data. QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor material and device transport properties. (C) 1997 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)709-713
    JournalJournal of Applied Physics
    Volume81
    DOIs
    Publication statusPublished - 1997

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