Abstract
The authors have investigated electrical transport in a type II GaSb/InAs superlattice grown on GaSb using “quantitative mobility spectrum analysis.” Their results indicate that the superlattice contributes a lone electron specie with an ambient temperature mobility of ∼104 cm2/V s. Variable temperature studies in the range 50–300 K show that the carrier is associated with an activation energy of 0.27 eV, which is very close to the superlattice band gap.
Original language | English |
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Pages (from-to) | 1081-1083 |
Journal | Journal of Vacuum Science & Technology B |
Volume | 26 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2008 |