Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice

T.V. Chandrasekhar Rao, Jarek Antoszewski, J.B. Rodriguez, E. Plis, S. Krishna, Lorenzo Faraone

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    Abstract

    The authors have investigated electrical transport in a type II GaSb/InAs superlattice grown on GaSb using “quantitative mobility spectrum analysis.” Their results indicate that the superlattice contributes a lone electron specie with an ambient temperature mobility of ∼104 cm2/V s. Variable temperature studies in the range 50–300 K show that the carrier is associated with an activation energy of 0.27 eV, which is very close to the superlattice band gap.
    Original languageEnglish
    Pages (from-to)1081-1083
    JournalJournal of Vacuum Science & Technology B
    Volume26
    Issue number3
    DOIs
    Publication statusPublished - 2008

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