Pulsed heating effect on porous silicon and measurement of thermal time constant

Research output: Contribution to conferenceConference presentation/ephemerapeer-review


A novel method to determine the thermal time constant of porous silicon using a metal-porous silicon-silicon-metal struc-ture is proposed. An applied voltage is used to induce heating, confirmed through thermal imaging and complementary current-voltage characterisation. Using multiple electrodes, the induced heating from a pulse is used to determine how the thermal wave propagates in the material and the thermal time constant of nitrogen annealed porous silicon film is derived. The proposed configuration provides a simple method for characterisation of porous silicon thermal properties.
Original languageEnglish
Publication statusPublished - 2018
EventPorous Semiconductors Science and Technology - La Grande Motte, La Grande Motte, France
Duration: 11 Mar 201816 Mar 2018


ConferencePorous Semiconductors Science and Technology
CityLa Grande Motte
Internet address


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