Abstract
A novel method to determine the thermal time constant of porous silicon using a metal-porous silicon-silicon-metal struc-ture is proposed. An applied voltage is used to induce heating, confirmed through thermal imaging and complementary current-voltage characterisation. Using multiple electrodes, the induced heating from a pulse is used to determine how the thermal wave propagates in the material and the thermal time constant of nitrogen annealed porous silicon film is derived. The proposed configuration provides a simple method for characterisation of porous silicon thermal properties.
| Original language | English |
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| Publication status | Published - 2018 |
| Event | Porous Semiconductors Science and Technology - La Grande Motte, La Grande Motte, France Duration: 11 Mar 2018 → 16 Mar 2018 http://www.psst2018.org/ |
Conference
| Conference | Porous Semiconductors Science and Technology |
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| Country/Territory | France |
| City | La Grande Motte |
| Period | 11/03/18 → 16/03/18 |
| Internet address |