A novel method to determine the thermal time constant of porous silicon using a metal-porous silicon-silicon-metal struc-ture is proposed. An applied voltage is used to induce heating, confirmed through thermal imaging and complementary current-voltage characterisation. Using multiple electrodes, the induced heating from a pulse is used to determine how the thermal wave propagates in the material and the thermal time constant of nitrogen annealed porous silicon film is derived. The proposed configuration provides a simple method for characterisation of porous silicon thermal properties.
|Publication status||Published - 2018|
|Event||Porous Semiconductors Science and Technology - La Grande Motte, La Grande Motte, France|
Duration: 11 Mar 2018 → 16 Mar 2018
|Conference||Porous Semiconductors Science and Technology|
|City||La Grande Motte|
|Period||11/03/18 → 16/03/18|