Progress on III-V-Bi Alloys and Light Emitting Devices

Shumin Wang, Li Yue, Lijuan Wang, Yanchao Zhang, Chang Wang, Xiaolei Zhang, Chaodan Chi, Hao Liang, Xiaoyan Wu, Juanjuan Liu, Wenwu Pan, Chunfang Cao, Yaoyao Li

Research output: Chapter in Book/Conference paperConference paper

Abstract

In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.

Original languageEnglish
Title of host publication2018 20th International Conference on Transparent Optical Networks (ICTON)
EditorsM Jaworski, M Marciniak
Place of PublicationRomania
PublisherWiley-IEEE Press
Number of pages4
Volume1
ISBN (Electronic)978-1-5386-6605-0
DOIs
Publication statusPublished - 2018
Externally publishedYes
Event20th International Conference on Transparent Optical Networks (ICTON) - Bucharest, Romania
Duration: 1 Jul 20185 Jul 2018

Publication series

NameInternational Conference on Transparent Optical Networks-ICTON
PublisherIEEE
ISSN (Print)2162-7339

Conference

Conference20th International Conference on Transparent Optical Networks (ICTON)
CountryRomania
CityBucharest
Period1/07/185/07/18

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