Progress on III-V-Bi Alloys and Light Emitting Devices

Shumin Wang; Li Yue; Lijuan Wang; Yanchao Zhang; Chang Wang; Xiaolei Zhang; Chaodan Chi; Hao Liang; Xiaoyan Wu; Juanjuan Liu; Wenwu Pan; Chunfang Cao; Yaoyao Li

doi:10.1109/ICTON.2018.8473745

Progress on III-V-Bi Alloys and Light Emitting Devices

Shumin Wang, Li Yue, Lijuan Wang, Yanchao Zhang, Chang Wang, Xiaolei Zhang, Chaodan Chi, Hao Liang, Xiaoyan Wu, Juanjuan Liu, Wenwu Pan, Chunfang Cao, Yaoyao Li

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

1 Citation (Web of Science)

Abstract

In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.

Original language	English
Title of host publication	2018 20th International Conference on Transparent Optical Networks (ICTON)
Editors	M Jaworski, M Marciniak
Place of Publication	Romania
Publisher	Wiley-IEEE Press
Number of pages	4
Volume	1
ISBN (Electronic)	9781538666043
DOIs	https://doi.org/10.1109/ICTON.2018.8473745
Publication status	Published - 26 Sep 2018
Externally published	Yes
Event	20th International Conference on Transparent Optical Networks (ICTON) - Bucharest, Romania Duration: 1 Jul 2018 → 5 Jul 2018

Publication series

Name	International Conference on Transparent Optical Networks-ICTON
Publisher	IEEE
ISSN (Print)	2162-7339

Conference

Conference	20th International Conference on Transparent Optical Networks (ICTON)
Country/Territory	Romania
City	Bucharest
Period	1/07/18 → 5/07/18

Access to Document

10.1109/ICTON.2018.8473745

Cite this

Wang, S., Yue, L., Wang, L., Zhang, Y., Wang, C., Zhang, X., Chi, C., Liang, H., Wu, X., Liu, J., Pan, W., Cao, C., & Li, Y. (2018). Progress on III-V-Bi Alloys and Light Emitting Devices. In M. Jaworski, & M. Marciniak (Eds.), 2018 20th International Conference on Transparent Optical Networks (ICTON) (Vol. 1). [8473745] (International Conference on Transparent Optical Networks-ICTON). Wiley-IEEE Press. https://doi.org/10.1109/ICTON.2018.8473745

@inproceedings{775f0e6c83714025aa5e4d2abd588d3c,

title = "Progress on III-V-Bi Alloys and Light Emitting Devices",

abstract = "In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.",

keywords = "dilute bismide, AlAsBi, AlSbBi, laser diode, light emitting diode, molecular beam epitaxy, BAND-GAP, GAAS1-XBIX",

author = "Shumin Wang and Li Yue and Lijuan Wang and Yanchao Zhang and Chang Wang and Xiaolei Zhang and Chaodan Chi and Hao Liang and Xiaoyan Wu and Juanjuan Liu and Wenwu Pan and Chunfang Cao and Yaoyao Li",

year = "2018",

month = sep,

day = "26",

doi = "10.1109/ICTON.2018.8473745",

language = "English",

volume = "1",

series = "International Conference on Transparent Optical Networks-ICTON",

publisher = "Wiley-IEEE Press",

editor = "M Jaworski and M Marciniak",

booktitle = "2018 20th International Conference on Transparent Optical Networks (ICTON)",

note = "20th International Conference on Transparent Optical Networks (ICTON) ; Conference date: 01-07-2018 Through 05-07-2018",

}

Wang, S, Yue, L, Wang, L, Zhang, Y, Wang, C, Zhang, X, Chi, C, Liang, H, Wu, X, Liu, J, Pan, W, Cao, C & Li, Y 2018, Progress on III-V-Bi Alloys and Light Emitting Devices. in M Jaworski & M Marciniak (eds), 2018 20th International Conference on Transparent Optical Networks (ICTON). vol. 1, 8473745, International Conference on Transparent Optical Networks-ICTON, Wiley-IEEE Press, Romania, 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, Romania, 1/07/18. https://doi.org/10.1109/ICTON.2018.8473745

Progress on III-V-Bi Alloys and Light Emitting Devices. / Wang, Shumin; Yue, Li; Wang, Lijuan et al.

2018 20th International Conference on Transparent Optical Networks (ICTON). ed. / M Jaworski; M Marciniak. Vol. 1 Romania : Wiley-IEEE Press, 2018. 8473745 (International Conference on Transparent Optical Networks-ICTON).

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Progress on III-V-Bi Alloys and Light Emitting Devices

AU - Wang, Shumin

AU - Yue, Li

AU - Wang, Lijuan

AU - Zhang, Yanchao

AU - Wang, Chang

AU - Zhang, Xiaolei

AU - Chi, Chaodan

AU - Liang, Hao

AU - Wu, Xiaoyan

AU - Liu, Juanjuan

AU - Pan, Wenwu

AU - Cao, Chunfang

AU - Li, Yaoyao

PY - 2018/9/26

Y1 - 2018/9/26

N2 - In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.

AB - In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.

KW - dilute bismide

KW - AlAsBi

KW - AlSbBi

KW - laser diode

KW - light emitting diode

KW - molecular beam epitaxy

KW - BAND-GAP

KW - GAAS1-XBIX

U2 - 10.1109/ICTON.2018.8473745

DO - 10.1109/ICTON.2018.8473745

M3 - Conference paper

VL - 1

T3 - International Conference on Transparent Optical Networks-ICTON

BT - 2018 20th International Conference on Transparent Optical Networks (ICTON)

A2 - Jaworski, M

A2 - Marciniak, M

PB - Wiley-IEEE Press

CY - Romania

T2 - 20th International Conference on Transparent Optical Networks (ICTON)

Y2 - 1 July 2018 through 5 July 2018

ER -

Wang S, Yue L, Wang L, Zhang Y, Wang C, Zhang X et al. Progress on III-V-Bi Alloys and Light Emitting Devices. In Jaworski M, Marciniak M, editors, 2018 20th International Conference on Transparent Optical Networks (ICTON). Vol. 1. Romania: Wiley-IEEE Press. 2018. 8473745. (International Conference on Transparent Optical Networks-ICTON). https://doi.org/10.1109/ICTON.2018.8473745

Progress on III-V-Bi Alloys and Light Emitting Devices

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