Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy

Wen Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A. D. Wieck

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Cite this

@article{77f92a79739b4aa29866fc59d47f5a86,

title = "Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy",

author = "Wen Lei and M. Offer and A. Lorke and C. Notthoff and C. Meier and O. Wibbelhoff and Wieck, {A. D.}",

year = "2008",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy

AU - Lei, Wen

AU - Offer, M.

AU - Lorke, A.

AU - Notthoff, C.

AU - Meier, C.

AU - Wibbelhoff, O.

AU - Wieck, A. D.

PY - 2008

Y1 - 2008

M3 - Article

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 193111

ER -