Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films

B.A. Walmsley; YN Liu; Xiao Hu; Mark Bush; John Dell; Lorenzo Faraone

doi:10.1109/JMEMS.2007.893518

Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films

B.A. Walmsley, YN Liu, Xiao Hu, Mark Bush, John Dell, Lorenzo Faraone

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

In this paper, the Poisson's ratio v of low-temperature plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films has been determined by a modified double-membrane bulge test. This test method utilizes a square membrane and a large-aspect- ratio rectangular membrane that is fabricated alongside from the same thin film. The Poisson's ratio is determined from the ratio of the bulge deflections of the two membranes under an applied pressure. The method is suitable for determining v of either stress-free thin films or those containing low tensile residual stresses. Poisson's ratio values of 0.23 +/- 0.02 and 0.25 +/- 0.01 were measured for SiNxHy films that were deposited at 125 degrees C and 205 degrees C, respectively.

Original language	English
Pages (from-to)	622-627
Journal	Journal of Microelectromechanical Systems
Volume	16
Issue number	3
DOIs	https://doi.org/10.1109/JMEMS.2007.893518
Publication status	Published - 2007

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title = "Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films",

abstract = "In this paper, the Poisson's ratio v of low-temperature plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films has been determined by a modified double-membrane bulge test. This test method utilizes a square membrane and a large-aspect- ratio rectangular membrane that is fabricated alongside from the same thin film. The Poisson's ratio is determined from the ratio of the bulge deflections of the two membranes under an applied pressure. The method is suitable for determining v of either stress-free thin films or those containing low tensile residual stresses. Poisson's ratio values of 0.23 +/- 0.02 and 0.25 +/- 0.01 were measured for SiNxHy films that were deposited at 125 degrees C and 205 degrees C, respectively.",

author = "B.A. Walmsley and YN Liu and Xiao Hu and Mark Bush and John Dell and Lorenzo Faraone",

year = "2007",

doi = "10.1109/JMEMS.2007.893518",

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publisher = "IEEE, Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Films

AU - Walmsley, B.A.

AU - Liu, YN

AU - Hu, Xiao

AU - Bush, Mark

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2007

Y1 - 2007

N2 - In this paper, the Poisson's ratio v of low-temperature plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films has been determined by a modified double-membrane bulge test. This test method utilizes a square membrane and a large-aspect- ratio rectangular membrane that is fabricated alongside from the same thin film. The Poisson's ratio is determined from the ratio of the bulge deflections of the two membranes under an applied pressure. The method is suitable for determining v of either stress-free thin films or those containing low tensile residual stresses. Poisson's ratio values of 0.23 +/- 0.02 and 0.25 +/- 0.01 were measured for SiNxHy films that were deposited at 125 degrees C and 205 degrees C, respectively.

AB - In this paper, the Poisson's ratio v of low-temperature plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films has been determined by a modified double-membrane bulge test. This test method utilizes a square membrane and a large-aspect- ratio rectangular membrane that is fabricated alongside from the same thin film. The Poisson's ratio is determined from the ratio of the bulge deflections of the two membranes under an applied pressure. The method is suitable for determining v of either stress-free thin films or those containing low tensile residual stresses. Poisson's ratio values of 0.23 +/- 0.02 and 0.25 +/- 0.01 were measured for SiNxHy films that were deposited at 125 degrees C and 205 degrees C, respectively.

U2 - 10.1109/JMEMS.2007.893518

DO - 10.1109/JMEMS.2007.893518

M3 - Article

VL - 16

SP - 622

EP - 627

JO - Journal of Microelectromechanical Systems

JF - Journal of Microelectromechanical Systems

SN - 1057-7157

IS - 3

ER -