TY - JOUR
T1 - Planar p-on-n HgCdTe Heterojunction Mid-Wavelength Infrared Photodiodes Formed Using Plasma-Induced Junction Isolation
AU - Musca, Charles
AU - Antoszewski, Jarek
AU - Dell, John
AU - Faraone, Lorenzo
AU - Terterian, S.
PY - 2003
Y1 - 2003
N2 - Planar p-on-n HgCdTe heterojunction photodiodes have been fabricated using a plasma-induced type conversion process for device junction isolation. The technique is presented as a fully planar alternative technology to the commonly used mesa isolation structure. The starting material consisted of an indium-doped n-type mid-wavelength infrared (MWIR) HgCdTe absorbing layer that was capped by a I-mum-thick wider bandgap arsenic-doped p-type layer. Junction-isolated p-on-n diodes were formed by selectively p-to-n type converting the p-type cap layer using a plasma process. Photodiode dark current-voltage measurements were performed as a function of temperature, along with noise and responsivity. The devices have cut-off wavelengths between 4.8 mum and 5.0 mum, exhibit diffusion-limited dark currents down to 145 K, give R(0)A values greater than I X 10(7) Omega . cm(2) at 80 K and greater than 1 x 10(5) Omega . cm(2) at 120 K, and have negligible 1/f noise current at zero applied bias.
AB - Planar p-on-n HgCdTe heterojunction photodiodes have been fabricated using a plasma-induced type conversion process for device junction isolation. The technique is presented as a fully planar alternative technology to the commonly used mesa isolation structure. The starting material consisted of an indium-doped n-type mid-wavelength infrared (MWIR) HgCdTe absorbing layer that was capped by a I-mum-thick wider bandgap arsenic-doped p-type layer. Junction-isolated p-on-n diodes were formed by selectively p-to-n type converting the p-type cap layer using a plasma process. Photodiode dark current-voltage measurements were performed as a function of temperature, along with noise and responsivity. The devices have cut-off wavelengths between 4.8 mum and 5.0 mum, exhibit diffusion-limited dark currents down to 145 K, give R(0)A values greater than I X 10(7) Omega . cm(2) at 80 K and greater than 1 x 10(5) Omega . cm(2) at 120 K, and have negligible 1/f noise current at zero applied bias.
U2 - 10.1007/s11664-003-0042-1
DO - 10.1007/s11664-003-0042-1
M3 - Article
VL - 32
SP - 622
EP - 626
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 7
ER -