Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator

Sujan Kumar Das, Sanjoy Kumar Nandi, Camilo Verbel Marquez, Armando Rua, Mutsunori Uenuma, Etienne Puyoo, Shimul Kanti Nath, David Albertini, Nicolas Baboux, Teng Lu, Yun Liu, Tobias Haeger, Ralf Heiderhoff, Thomas Riedl, Thomas Ratcliff, Robert Glen Elliman

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V3O5 thin films and their application as the functional oxide in metal/oxide/metal relaxation oscillators are reported. The V3O5 devices show electroforming-free volatile threshold switching and negative differential resistance (NDR) with stable (
Original languageEnglish
Article number2208477
Number of pages11
JournalAdvanced Materials
Volume35
Issue number8
Early online date2 Dec 2022
DOIs
Publication statusPublished - 23 Feb 2023

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