Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator

Sujan Kumar Das; Sanjoy Kumar Nandi; Camilo Verbel Marquez; Armando Rua; Mutsunori Uenuma; Etienne Puyoo; Shimul Kanti Nath; David Albertini; Nicolas Baboux; Teng Lu; Yun Liu; Tobias Haeger; Ralf Heiderhoff; Thomas Riedl; Thomas Ratcliff; Robert Glen Elliman

doi:10.1002/adma.202208477

Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator

Sujan Kumar Das, Sanjoy Kumar Nandi, Camilo Verbel Marquez, Armando Rua, Mutsunori Uenuma, Etienne Puyoo, Shimul Kanti Nath, David Albertini, Nicolas Baboux, Teng Lu, Yun Liu, Tobias Haeger, Ralf Heiderhoff, Thomas Riedl, Thomas Ratcliff, Robert Glen Elliman

School of Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V3O5 thin films and their application as the functional oxide in metal/oxide/metal relaxation oscillators are reported. The V3O5 devices show electroforming-free volatile threshold switching and negative differential resistance (NDR) with stable (

Original language	English
Article number	2208477
Number of pages	11
Journal	Advanced Materials
Volume	35
Issue number	8
Early online date	2 Dec 2022
DOIs	https://doi.org/10.1002/adma.202208477
Publication status	Published - 23 Feb 2023

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10.1002/adma.202208477Licence: CC BY-NC-ND

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Das, S. K., Nandi, S. K., Marquez, C. V., Rua, A., Uenuma, M., Puyoo, E., Nath, S. K., Albertini, D., Baboux, N., Lu, T., Liu, Y., Haeger, T., Heiderhoff, R., Riedl, T., Ratcliff, T., & Elliman, R. G. (2023). Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator. Advanced Materials, 35(8), Article 2208477. https://doi.org/10.1002/adma.202208477

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abstract = "Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V3O5 thin films and their application as the functional oxide in metal/oxide/metal relaxation oscillators are reported. The V3O5 devices show electroforming-free volatile threshold switching and negative differential resistance (NDR) with stable (",

keywords = "metal-insulator transition, negative differential resistance, neuromorphic computing, threshold switching, V3O5, INSULATOR-METAL TRANSITION, THERMAL-CONDUCTIVITY, PHASE-TRANSITION, IN-SITU, MEMRISTORS",

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Das, SK, Nandi, SK, Marquez, CV, Rua, A, Uenuma, M, Puyoo, E, Nath, SK, Albertini, D, Baboux, N, Lu, T, Liu, Y, Haeger, T, Heiderhoff, R, Riedl, T, Ratcliff, T & Elliman, RG 2023, 'Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator', Advanced Materials, vol. 35, no. 8, 2208477. https://doi.org/10.1002/adma.202208477

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AU - Das, Sujan Kumar

AU - Nandi, Sanjoy Kumar

AU - Marquez, Camilo Verbel

AU - Rua, Armando

AU - Uenuma, Mutsunori

AU - Puyoo, Etienne

AU - Nath, Shimul Kanti

AU - Albertini, David

AU - Baboux, Nicolas

AU - Lu, Teng

AU - Liu, Yun

AU - Haeger, Tobias

AU - Heiderhoff, Ralf

AU - Riedl, Thomas

AU - Ratcliff, Thomas

AU - Elliman, Robert Glen

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Y1 - 2023/2/23

N2 - Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V3O5 thin films and their application as the functional oxide in metal/oxide/metal relaxation oscillators are reported. The V3O5 devices show electroforming-free volatile threshold switching and negative differential resistance (NDR) with stable (

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KW - PHASE-TRANSITION

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Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid-State Oscillator

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