Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

Wenwu Pan; Liyao Zhang; Liang Zhu; Yuxin Song; Yaoyao Li; Chang Wang; Peng Wang; Xiaoyan Wu; Fan Zhang; Jun Shao; Shumin Wang

doi:10.1088/1361-6641/32/1/015007

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

Wenwu Pan, Liyao Zhang, Liang Zhu, Yuxin Song, Yaoyao Li, Chang Wang, Peng Wang, Xiaoyan Wu, Fan Zhang, Jun Shao, Shumin Wang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In x Ga1-x As/GaAs1-y Bi y /In x Ga1-x As (0.20 ≤ x ≤ 0.22, 0.035 ≤ y ≤ 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k · p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm.

Original language	English
Article number	015007
Pages (from-to)	15007
Journal	Semiconductor Science and Technology
Volume	32
Issue number	1
DOIs	https://doi.org/10.1088/1361-6641/32/1/015007
Publication status	Published - 1 Jan 2017
Externally published	Yes

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10.1088/1361-6641/32/1/015007

http://adsabs.harvard.edu/abs/2017SeScT..32a5007P

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title = "Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy",

abstract = "In x Ga1-x As/GaAs1-y Bi y /In x Ga1-x As (0.20 ≤ x ≤ 0.22, 0.035 ≤ y ≤ 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k · p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm.",

author = "Wenwu Pan and Liyao Zhang and Liang Zhu and Yuxin Song and Yaoyao Li and Chang Wang and Peng Wang and Xiaoyan Wu and Fan Zhang and Jun Shao and Shumin Wang",

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doi = "10.1088/1361-6641/32/1/015007",

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T1 - Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

AU - Pan, Wenwu

AU - Zhang, Liyao

AU - Zhu, Liang

AU - Song, Yuxin

AU - Li, Yaoyao

AU - Wang, Chang

AU - Wang, Peng

AU - Wu, Xiaoyan

AU - Zhang, Fan

AU - Shao, Jun

AU - Wang, Shumin

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In x Ga1-x As/GaAs1-y Bi y /In x Ga1-x As (0.20 ≤ x ≤ 0.22, 0.035 ≤ y ≤ 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k · p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm.

AB - In x Ga1-x As/GaAs1-y Bi y /In x Ga1-x As (0.20 ≤ x ≤ 0.22, 0.035 ≤ y ≤ 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k · p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm.

UR - https://www.scopus.com/pages/publications/85007258333

U2 - 10.1088/1361-6641/32/1/015007

DO - 10.1088/1361-6641/32/1/015007

M3 - Article

SN - 0268-1242

VL - 32

SP - 15007

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

M1 - 015007

ER -

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

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