Abstract
In x Ga1-x As/GaAs1-y
Bi y /In x Ga1-x As (0.20
≤ x ≤ 0.22, 0.035 ≤ y ≤ 0.045) quantum wells (QWs) were
grown on GaAs substrates by gas source molecular beam epitaxy for
realizing the type-II band edge line-up. Both type-I and type-II
transitions were observed in the Bi containing W QWs and the
photoluminescence intensity was enhanced in the sample with a high Bi
content, which is mainly due to the improvement of carrier confinement.
The 8 band k · p model was used to analyze the electronic
properties in the QWs and the calculated transition energies fit well
with the experiment results. Our study shows that the proposed type-II
QW is a promising candidate for realizing GaAs-based near infrared light
emitting devices near 1.3 μm.
Original language | English |
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Pages (from-to) | 15007 |
Journal | Semiconductor Science and Technology |
Volume | 32 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2017 |
Externally published | Yes |