Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

Wenwu Pan, Liyao Zhang, Liang Zhu, Yuxin Song, Yaoyao Li, Chang Wang, Peng Wang, Xiaoyan Wu, Fan Zhang, Jun Shao, Shumin Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In x Ga1-x As/GaAs1-y Bi y /In x Ga1-x As (0.20 ≤ x ≤ 0.22, 0.035 ≤ y ≤ 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k · p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm.
Original languageEnglish
Pages (from-to)15007
JournalSemiconductor Science and Technology
Volume32
Issue number1
DOIs
Publication statusPublished - 1 Jan 2017
Externally publishedYes

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