Methods to transfer a pattern into porous silicon using light are reviewed. These methods can be applied before, during, or after the anodization processes. The advantages and disadvantages of each method are noted and technical performance compared using the aspect ratio of the pattern transferred into the porous silicon as a key metric. Based on this comparison, it is possible to group the various methods in a manner that allows specific applications to use the most appropriate patterningmethod.
|Title of host publication||Handbook of Porous Silicon|
|Place of Publication||Switzerland|
|Publisher||Springer International Publishing AG|
|Number of pages||8|
|Publication status||Published - 4 Jul 2018|