Photolithography on porous silicon

Adrian Keating

doi:10.1007/978-3-319-71381-6_54

Photolithography on porous silicon

Research output: Chapter in Book/Conference paper › Chapter › peer-review

Abstract

Methods to transfer a pattern into porous silicon using light are reviewed. These methods can be applied before, during, or after the anodization processes. The advantages and disadvantages of each method are noted and technical performance compared using the aspect ratio of the pattern transferred into the porous silicon as a key metric. Based on this comparison, it is possible to group the various methods in a manner that allows specific applications to use the most appropriate patterningmethod.

Original language	English
Title of host publication	Handbook of Porous Silicon
Editors	Leigh Canham
Place of Publication	Switzerland
Publisher	Springer International Publishing AG
Pages	797-804
Number of pages	8
Volume	2-2
Edition	2
ISBN (Electronic)	9783319713816
ISBN (Print)	9783319713793
DOIs	https://doi.org/10.1007/978-3-319-71381-6_54
Publication status	Published - 4 Jul 2018

Access to Document

10.1007/978-3-319-71381-6_54

Cite this

@inbook{bfc8e011d3a64c2794636e37fd4e73ae,

title = "Photolithography on porous silicon",

abstract = "Methods to transfer a pattern into porous silicon using light are reviewed. These methods can be applied before, during, or after the anodization processes. The advantages and disadvantages of each method are noted and technical performance compared using the aspect ratio of the pattern transferred into the porous silicon as a key metric. Based on this comparison, it is possible to group the various methods in a manner that allows specific applications to use the most appropriate patterningmethod.",

keywords = "Mask, Passivation, Pattern transfer, Photo-dissolution, Photoelectrodissolution, Photolithography, Photoresist",

author = "Adrian Keating",

year = "2018",

month = jul,

day = "4",

doi = "10.1007/978-3-319-71381-6_54",

language = "English",

isbn = "9783319713793",

volume = "2-2",

pages = "797--804",

editor = "{ Canham}, Leigh",

booktitle = "Handbook of Porous Silicon",

publisher = "Springer International Publishing AG",

address = "Switzerland",

edition = "2",

}

TY - CHAP

T1 - Photolithography on porous silicon

AU - Keating, Adrian

PY - 2018/7/4

Y1 - 2018/7/4

N2 - Methods to transfer a pattern into porous silicon using light are reviewed. These methods can be applied before, during, or after the anodization processes. The advantages and disadvantages of each method are noted and technical performance compared using the aspect ratio of the pattern transferred into the porous silicon as a key metric. Based on this comparison, it is possible to group the various methods in a manner that allows specific applications to use the most appropriate patterningmethod.

AB - Methods to transfer a pattern into porous silicon using light are reviewed. These methods can be applied before, during, or after the anodization processes. The advantages and disadvantages of each method are noted and technical performance compared using the aspect ratio of the pattern transferred into the porous silicon as a key metric. Based on this comparison, it is possible to group the various methods in a manner that allows specific applications to use the most appropriate patterningmethod.

KW - Mask

KW - Passivation

KW - Pattern transfer

KW - Photo-dissolution

KW - Photoelectrodissolution

KW - Photolithography

KW - Photoresist

UR - http://www.scopus.com/inward/record.url?scp=85053967058&partnerID=8YFLogxK

U2 - 10.1007/978-3-319-71381-6_54

DO - 10.1007/978-3-319-71381-6_54

M3 - Chapter

AN - SCOPUS:85053967058

SN - 9783319713793

VL - 2-2

SP - 797

EP - 804

BT - Handbook of Porous Silicon

A2 - Canham, Leigh

PB - Springer International Publishing AG

CY - Switzerland

ER -

Photolithography on porous silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this