Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films

Nils B. Refvik; David N. Purschke; Charles E. Jensen; Wenwu Pan; Howe R.J. Simpson; Wen Lei; Renjie Gu; Jarek Antoszewski; Gilberto A. Umana-Membreno; Lorenzo Faraone; Frank A. Hegmann

doi:10.1109/IRMMW-THz60956.2024.10697658

Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films

Nils B. Refvik, David N. Purschke, Charles E. Jensen, Wenwu Pan, Howe R.J. Simpson, Wen Lei, Renjie Gu, Jarek Antoszewski, Gilberto A. Umana-Membreno, Lorenzo Faraone, Frank A. Hegmann

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Abstract

The characterization of carrier dynamics in mercury cadmium telluride (HgCdTe) thin films is essential for novel applications in long-wave infrared detection. Here, we conduct a novel study of ultrahigh carrier mobilities in narrow-gap HgCdTe films as measured by both terahertz time-domain spectroscopy (THz-TDS) at equilibrium and time-resolved THz spectroscopy (TRTS) after ultrafast photoexcitation. The observed THz transmission through the photoexcited samples is accurately modelled by a three-layer thin-film formula. At low temperatures, the carrier mobility obtained by TRTS is significantly higher than that obtained by THz-TDS. We attribute this enhancement in the low-temperature photocarrier mobility to suppression of impurity scattering by photoexcited holes.

Original language	English
Title of host publication	2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	9798350370324
DOIs	https://doi.org/10.1109/IRMMW-THz60956.2024.10697658
Publication status	Published - 7 Oct 2024
Event	49th International Conference on Infrared, Millimeter, and Terahertz Waves - Perth, Australia Duration: 1 Sept 2024 → 6 Sept 2024

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	49th International Conference on Infrared, Millimeter, and Terahertz Waves
Abbreviated title	RMMW-THz 2024
Country/Territory	Australia
City	Perth
Period	1/09/24 → 6/09/24

Access to Document

10.1109/IRMMW-THz60956.2024.10697658

Cite this

Refvik, N. B., Purschke, D. N., Jensen, C. E., Pan, W., Simpson, H. R. J., Lei, W., Gu, R., Antoszewski, J., Umana-Membreno, G. A., Faraone, L., & Hegmann, F. A. (2024). Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films. In 2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IRMMW-THz60956.2024.10697658

Refvik, Nils B. ; Purschke, David N. ; Jensen, Charles E. et al. / Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films. 2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024. IEEE, Institute of Electrical and Electronics Engineers, 2024. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

@inproceedings{af50acd379b844d48486bc864cb81f14,

title = "Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films",

abstract = "The characterization of carrier dynamics in mercury cadmium telluride (HgCdTe) thin films is essential for novel applications in long-wave infrared detection. Here, we conduct a novel study of ultrahigh carrier mobilities in narrow-gap HgCdTe films as measured by both terahertz time-domain spectroscopy (THz-TDS) at equilibrium and time-resolved THz spectroscopy (TRTS) after ultrafast photoexcitation. The observed THz transmission through the photoexcited samples is accurately modelled by a three-layer thin-film formula. At low temperatures, the carrier mobility obtained by TRTS is significantly higher than that obtained by THz-TDS. We attribute this enhancement in the low-temperature photocarrier mobility to suppression of impurity scattering by photoexcited holes.",

keywords = "II-VI semiconductor materials, THz-TDS, Time-resolved terahertz spectroscopy, ultrafast carrier dynamics",

author = "Refvik, {Nils B.} and Purschke, {David N.} and Jensen, {Charles E.} and Wenwu Pan and Simpson, {Howe R.J.} and Wen Lei and Renjie Gu and Jarek Antoszewski and Umana-Membreno, {Gilberto A.} and Lorenzo Faraone and Hegmann, {Frank A.}",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 49th International Conference on Infrared, Millimeter, and Terahertz Waves, RMMW-THz 2024 ; Conference date: 01-09-2024 Through 06-09-2024",

year = "2024",

month = oct,

day = "7",

doi = "10.1109/IRMMW-THz60956.2024.10697658",

language = "English",

series = "International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

booktitle = "2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024",

address = "United States",

}

Refvik, NB, Purschke, DN, Jensen, CE, Pan, W, Simpson, HRJ, Lei, W, Gu, R , Antoszewski, J , Umana-Membreno, GA , Faraone, L & Hegmann, FA 2024, Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films. in 2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, IEEE, Institute of Electrical and Electronics Engineers, 49th International Conference on Infrared, Millimeter, and Terahertz Waves, Perth, Western Australia, Australia, 1/09/24. https://doi.org/10.1109/IRMMW-THz60956.2024.10697658

Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films. / Refvik, Nils B.; Purschke, David N.; Jensen, Charles E. et al.
2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024. IEEE, Institute of Electrical and Electronics Engineers, 2024. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films

AU - Refvik, Nils B.

AU - Purschke, David N.

AU - Jensen, Charles E.

AU - Pan, Wenwu

AU - Simpson, Howe R.J.

AU - Lei, Wen

AU - Gu, Renjie

AU - Antoszewski, Jarek

AU - Umana-Membreno, Gilberto A.

AU - Faraone, Lorenzo

AU - Hegmann, Frank A.

PY - 2024/10/7

Y1 - 2024/10/7

N2 - The characterization of carrier dynamics in mercury cadmium telluride (HgCdTe) thin films is essential for novel applications in long-wave infrared detection. Here, we conduct a novel study of ultrahigh carrier mobilities in narrow-gap HgCdTe films as measured by both terahertz time-domain spectroscopy (THz-TDS) at equilibrium and time-resolved THz spectroscopy (TRTS) after ultrafast photoexcitation. The observed THz transmission through the photoexcited samples is accurately modelled by a three-layer thin-film formula. At low temperatures, the carrier mobility obtained by TRTS is significantly higher than that obtained by THz-TDS. We attribute this enhancement in the low-temperature photocarrier mobility to suppression of impurity scattering by photoexcited holes.

AB - The characterization of carrier dynamics in mercury cadmium telluride (HgCdTe) thin films is essential for novel applications in long-wave infrared detection. Here, we conduct a novel study of ultrahigh carrier mobilities in narrow-gap HgCdTe films as measured by both terahertz time-domain spectroscopy (THz-TDS) at equilibrium and time-resolved THz spectroscopy (TRTS) after ultrafast photoexcitation. The observed THz transmission through the photoexcited samples is accurately modelled by a three-layer thin-film formula. At low temperatures, the carrier mobility obtained by TRTS is significantly higher than that obtained by THz-TDS. We attribute this enhancement in the low-temperature photocarrier mobility to suppression of impurity scattering by photoexcited holes.

KW - II-VI semiconductor materials

KW - THz-TDS

KW - Time-resolved terahertz spectroscopy

KW - ultrafast carrier dynamics

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U2 - 10.1109/IRMMW-THz60956.2024.10697658

DO - 10.1109/IRMMW-THz60956.2024.10697658

M3 - Conference paper

AN - SCOPUS:85207173119

T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

BT - 2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - 49th International Conference on Infrared, Millimeter, and Terahertz Waves

Y2 - 1 September 2024 through 6 September 2024

ER -

Refvik NB, Purschke DN, Jensen CE, Pan W, Simpson HRJ, Lei W et al. Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films. In 2024 49th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2024. IEEE, Institute of Electrical and Electronics Engineers. 2024. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz60956.2024.10697658

Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films

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ARC Centre of Excellence for Transformative Meta-Optical Systems

Defect generation in hetero-epitaxy on lattice mismatched substrates

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Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

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ARC Centre of Excellence for Transformative Meta-Optical Systems

Defect generation in hetero-epitaxy on lattice mismatched substrates

Cite this