Performance estimation of junctionless multigate transistors

Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Delidashti Akhavan, Pedrarn Razavi, Jean-Pierre Colinge

Research output: Contribution to journalArticlepeer-review

519 Citations (Scopus)


This paper describes the simulation of the electrical characteristics of a new transistor concept called the "junctionless Multigate Field-Effect Transistor (MuGFET)". The proposed device has no junctions, a simpler fabrication process, less variability and better electrical properties than classical inversion-mode devices with PN junctions at the source and drain The simulation results indicate that the junctionless MuGFET is a very promising candidate for future decananometer MOSFET applications. (C) 2009 Elsevier All rights reserved

Original languageEnglish
Pages (from-to)97-103
Number of pages7
JournalSolid-State Electronics
Issue number2
Publication statusPublished - Feb 2010
Event5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009) - Gothenburg, Sweden
Duration: 19 Jan 200921 Jan 2009


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