Parasitic Memcapacitor Effects on HP TiO2 Memristor Dynamics

Yiran Shen, Guangyi Wang, Yan Liang, Simin Yu, Herbert Ho-ching Iu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


In this paper, we study an HP TiO2 memristor model with a parasitic memcapacitor, and it is shown that the parasitic element has significant effects on the volt-ampere characteristics and the dynamics of the memristor circuits. Further, the study shows that the pinched point on the hysteresis loop of the HP TiO2 memristor may deviate from the origin. We also show that the memristor with a parasitic memcapacitor will eventually lose its stored flux when its power is switched off. Furthermore, in order to study the parasitic effects in circuits, we derive a simple three-element series circuit that contains an inductor, a negative resistor, and an HP TiO2 memristor. If the parasitic memcapacitor of the memristor is considered, we observe a parasitic periodic oscillation occurred in the circuit.

Original languageEnglish
Pages (from-to)59825-59831
Number of pages7
JournalIEEE Access
Publication statusPublished - 2019


Dive into the research topics of 'Parasitic Memcapacitor Effects on HP TiO2 Memristor Dynamics'. Together they form a unique fingerprint.

Cite this