Oxidation of PECVD SiNx thin films

N. Jehanathan; B.A. Walmsley; Y. Liu; John Dell

doi:10.1016/j.jallcom.2006.08.004

Oxidation of PECVD SiNx thin films

N. Jehanathan, B.A. Walmsley, Y. Liu, John Dell

Graduate Research School

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The effect of heat treatment on the chemical structure of low-temperature plasma-enhanced chemical vapor deposited silicon nitride thin films is presented. The deposited films were heat treated to temperatures up to 1373 K in air. The chemical composition of the films was analysed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was found that the as-deposited films contained Si, N and H in varying proportions, depending on deposition and post-deposition treatment conditions. Upon heating to elevated temperatures, N lost from the films in two stages by different mechanisms. The decrease in N concentration at relatively low heat treatment temperatures (< 673 K) is due to loss of N-H bonded N, whereas, the decrease at higher temperatures is due to the oxidation conversion of the SiNx matrix. Heating to high temperatures also resulted in the removal of H. (C) 2006 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	332-338
Journal	Journal of Alloys and Compounds
Volume	437
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2006.08.004
Publication status	Published - 2007

Access to Document

10.1016/j.jallcom.2006.08.004

Cite this

@article{8e2659a921504de9a5f61fd04ef72be2,

title = "Oxidation of PECVD SiNx thin films",

abstract = "The effect of heat treatment on the chemical structure of low-temperature plasma-enhanced chemical vapor deposited silicon nitride thin films is presented. The deposited films were heat treated to temperatures up to 1373 K in air. The chemical composition of the films was analysed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was found that the as-deposited films contained Si, N and H in varying proportions, depending on deposition and post-deposition treatment conditions. Upon heating to elevated temperatures, N lost from the films in two stages by different mechanisms. The decrease in N concentration at relatively low heat treatment temperatures (< 673 K) is due to loss of N-H bonded N, whereas, the decrease at higher temperatures is due to the oxidation conversion of the SiNx matrix. Heating to high temperatures also resulted in the removal of H. (C) 2006 Elsevier B.V. All rights reserved.",

author = "N. Jehanathan and B.A. Walmsley and Y. Liu and John Dell",

year = "2007",

doi = "10.1016/j.jallcom.2006.08.004",

language = "English",

volume = "437",

pages = "332--338",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier Science & Technology",

number = "1-2",

}

TY - JOUR

T1 - Oxidation of PECVD SiNx thin films

AU - Jehanathan, N.

AU - Walmsley, B.A.

AU - Liu, Y.

AU - Dell, John

PY - 2007

Y1 - 2007

N2 - The effect of heat treatment on the chemical structure of low-temperature plasma-enhanced chemical vapor deposited silicon nitride thin films is presented. The deposited films were heat treated to temperatures up to 1373 K in air. The chemical composition of the films was analysed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was found that the as-deposited films contained Si, N and H in varying proportions, depending on deposition and post-deposition treatment conditions. Upon heating to elevated temperatures, N lost from the films in two stages by different mechanisms. The decrease in N concentration at relatively low heat treatment temperatures (< 673 K) is due to loss of N-H bonded N, whereas, the decrease at higher temperatures is due to the oxidation conversion of the SiNx matrix. Heating to high temperatures also resulted in the removal of H. (C) 2006 Elsevier B.V. All rights reserved.

AB - The effect of heat treatment on the chemical structure of low-temperature plasma-enhanced chemical vapor deposited silicon nitride thin films is presented. The deposited films were heat treated to temperatures up to 1373 K in air. The chemical composition of the films was analysed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was found that the as-deposited films contained Si, N and H in varying proportions, depending on deposition and post-deposition treatment conditions. Upon heating to elevated temperatures, N lost from the films in two stages by different mechanisms. The decrease in N concentration at relatively low heat treatment temperatures (< 673 K) is due to loss of N-H bonded N, whereas, the decrease at higher temperatures is due to the oxidation conversion of the SiNx matrix. Heating to high temperatures also resulted in the removal of H. (C) 2006 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.jallcom.2006.08.004

DO - 10.1016/j.jallcom.2006.08.004

M3 - Article

SN - 0925-8388

VL - 437

SP - 332

EP - 338

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Oxidation of PECVD SiNx thin films

Abstract

Access to Document

Fingerprint

Cite this