Ordering of self-assembled quantum wires on InP (001) surfaces

Wen Lei; Y.H. Chen; Z.G. Wang

Ordering of self-assembled quantum wires on InP (001) surfaces

Wen Lei
, Y.H. Chen
, Z.G. Wang

Research output: Chapter in Book/Conference paper › Chapter › peer-review

Abstract

InAs/InAl(Ga)As quantum wires (QWRs) have been grown on InP (001) substrates by molecular beam epitaxy (MBE) technology. A modified S-K growth mode has been presented for the formation of InAs QWRs on InAl(Ga)As/InP (001) substrate, in which the effect of lateral composition modulation in InAlAs buffer layers plays an important role. Vertical anticorrelation of InAs quantum wire
superlattices has been observed and attributed to the interplay of strain field distribution and alloy phase separation in InAlAs matrix around InAs QWRs. The structural and optical properties of InAs/InAlAs QWR superlattices have also been
discussed.

Original language	English
Title of host publication	One-Dimensional Nanostructures
Editors	Zhiming M. Wang
Publisher	Springer
Chapter	12
Pages	291-322
Edition	1
Publication status	Published - 2008
Externally published	Yes

Cite this

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title = "Ordering of self-assembled quantum wires on InP (001) surfaces",

abstract = "InAs/InAl(Ga)As quantum wires (QWRs) have been grown on InP (001) substrates by molecular beam epitaxy (MBE) technology. A modified S-K growth mode has been presented for the formation of InAs QWRs on InAl(Ga)As/InP (001) substrate, in which the effect of lateral composition modulation in InAlAs buffer layers plays an important role. Vertical anticorrelation of InAs quantum wire superlattices has been observed and attributed to the interplay of strain field distribution and alloy phase separation in InAlAs matrix around InAs QWRs. The structural and optical properties of InAs/InAlAs QWR superlattices have also been discussed.",

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language = "English",

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T1 - Ordering of self-assembled quantum wires on InP (001) surfaces

AU - Lei, Wen

AU - Chen, Y.H.

AU - Wang, Z.G.

PY - 2008

Y1 - 2008

N2 - InAs/InAl(Ga)As quantum wires (QWRs) have been grown on InP (001) substrates by molecular beam epitaxy (MBE) technology. A modified S-K growth mode has been presented for the formation of InAs QWRs on InAl(Ga)As/InP (001) substrate, in which the effect of lateral composition modulation in InAlAs buffer layers plays an important role. Vertical anticorrelation of InAs quantum wire superlattices has been observed and attributed to the interplay of strain field distribution and alloy phase separation in InAlAs matrix around InAs QWRs. The structural and optical properties of InAs/InAlAs QWR superlattices have also been discussed.

AB - InAs/InAl(Ga)As quantum wires (QWRs) have been grown on InP (001) substrates by molecular beam epitaxy (MBE) technology. A modified S-K growth mode has been presented for the formation of InAs QWRs on InAl(Ga)As/InP (001) substrate, in which the effect of lateral composition modulation in InAlAs buffer layers plays an important role. Vertical anticorrelation of InAs quantum wire superlattices has been observed and attributed to the interplay of strain field distribution and alloy phase separation in InAlAs matrix around InAs QWRs. The structural and optical properties of InAs/InAlAs QWR superlattices have also been discussed.

M3 - Chapter

SP - 291

EP - 322

BT - One-Dimensional Nanostructures

A2 - Wang, Zhiming M.

PB - Springer

ER -

Ordering of self-assembled quantum wires on InP (001) surfaces

Abstract

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