Optimization Study of a Novel Few-Layer Graphene/Silicon Quantum Dots/Silicon Heterojunction Solar Cell Through Opto-Electrical Modeling

Zahra Arefinia, Asghar Asgari

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

FLG/SiQDs/Si heterojunction solar cells consisting of a layer of silicon quantum dots (SiQDs) sandwiched between few-layer graphene (FLG) and p- or n-type silicon is examined by a device physics model incorporated with the optical characteristics of FLG and SiQDs. FLG/SiQDs/Si solar cells enhance short-circuit current density, because charge carriers can tunnel through the energy states in SiQDs. Also, the quantum size effects result in a shift in the conduction and valence subband position of SiQDs which leads to a wide band gap and consequently the improvement of open-circuit voltage for FLG/SiQDs/Si solar cells. In addition, further improvement in the performance of FLG/SiQDs/Si solar cells can be obtained by tuning the size of SiQDs and FLG properties.

Original languageEnglish
Article number4800106
JournalIEEE Journal of Quantum Electronics
Volume54
Issue number1
DOIs
Publication statusPublished - Feb 2018

Fingerprint

Graphene
Semiconductor quantum dots
Heterojunctions
heterojunctions
Solar cells
graphene
solar cells
quantum dots
Silicon
optimization
silicon
Open circuit voltage
short circuit currents
open circuit voltage
Charge carriers
Short circuit currents
Electron energy levels
tunnels
charge carriers
Tunnels

Cite this

@article{400912e021544a9186ec31911ae48535,
title = "Optimization Study of a Novel Few-Layer Graphene/Silicon Quantum Dots/Silicon Heterojunction Solar Cell Through Opto-Electrical Modeling",
abstract = "FLG/SiQDs/Si heterojunction solar cells consisting of a layer of silicon quantum dots (SiQDs) sandwiched between few-layer graphene (FLG) and p- or n-type silicon is examined by a device physics model incorporated with the optical characteristics of FLG and SiQDs. FLG/SiQDs/Si solar cells enhance short-circuit current density, because charge carriers can tunnel through the energy states in SiQDs. Also, the quantum size effects result in a shift in the conduction and valence subband position of SiQDs which leads to a wide band gap and consequently the improvement of open-circuit voltage for FLG/SiQDs/Si solar cells. In addition, further improvement in the performance of FLG/SiQDs/Si solar cells can be obtained by tuning the size of SiQDs and FLG properties.",
keywords = "few-layer graphene, Graphene, Heterojunctions, Mathematical model, Metals, opto-electrical modeling, Photonic band gap, Photovoltaic cells, quantum dot, Silicon, solar cell",
author = "Zahra Arefinia and Asghar Asgari",
year = "2018",
month = "2",
doi = "10.1109/JQE.2017.2774144",
language = "English",
volume = "54",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "IEEE, Institute of Electrical and Electronics Engineers",
number = "1",

}

TY - JOUR

T1 - Optimization Study of a Novel Few-Layer Graphene/Silicon Quantum Dots/Silicon Heterojunction Solar Cell Through Opto-Electrical Modeling

AU - Arefinia, Zahra

AU - Asgari, Asghar

PY - 2018/2

Y1 - 2018/2

N2 - FLG/SiQDs/Si heterojunction solar cells consisting of a layer of silicon quantum dots (SiQDs) sandwiched between few-layer graphene (FLG) and p- or n-type silicon is examined by a device physics model incorporated with the optical characteristics of FLG and SiQDs. FLG/SiQDs/Si solar cells enhance short-circuit current density, because charge carriers can tunnel through the energy states in SiQDs. Also, the quantum size effects result in a shift in the conduction and valence subband position of SiQDs which leads to a wide band gap and consequently the improvement of open-circuit voltage for FLG/SiQDs/Si solar cells. In addition, further improvement in the performance of FLG/SiQDs/Si solar cells can be obtained by tuning the size of SiQDs and FLG properties.

AB - FLG/SiQDs/Si heterojunction solar cells consisting of a layer of silicon quantum dots (SiQDs) sandwiched between few-layer graphene (FLG) and p- or n-type silicon is examined by a device physics model incorporated with the optical characteristics of FLG and SiQDs. FLG/SiQDs/Si solar cells enhance short-circuit current density, because charge carriers can tunnel through the energy states in SiQDs. Also, the quantum size effects result in a shift in the conduction and valence subband position of SiQDs which leads to a wide band gap and consequently the improvement of open-circuit voltage for FLG/SiQDs/Si solar cells. In addition, further improvement in the performance of FLG/SiQDs/Si solar cells can be obtained by tuning the size of SiQDs and FLG properties.

KW - few-layer graphene

KW - Graphene

KW - Heterojunctions

KW - Mathematical model

KW - Metals

KW - opto-electrical modeling

KW - Photonic band gap

KW - Photovoltaic cells

KW - quantum dot

KW - Silicon

KW - solar cell

UR - http://www.scopus.com/inward/record.url?scp=85036560495&partnerID=8YFLogxK

U2 - 10.1109/JQE.2017.2774144

DO - 10.1109/JQE.2017.2774144

M3 - Article

VL - 54

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 1

M1 - 4800106

ER -