Optical properties of InAlAs quantum dots in an AlGaAs matrix

A. F. Tsatsul'nikov; A. Yu Egorov; P. S. Kop'ev; A. R. Kovsh; N. N. Ledentsov; M. V. Maximov; A. A. Suvorova; V. M. Ustinov; B. V. Volovik; A. E. Zhukov; M. Grundmann; D. Bimberg; Zh I. Alferov

doi:10.1016/S0169-4332(97)00493-5

Optical properties of InAlAs quantum dots in an AlGaAs matrix

A. F. Tsatsul'nikov, A. Yu Egorov, P. S. Kop'ev, A. R. Kovsh, N. N. Ledentsov, M. V. Maximov, A. A. Suvorova, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, M. Grundmann, D. Bimberg, Zh I. Alferov

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Structural and optical properties of In _x Al _1-x As quantum dots (QD) embedded in an Al _0.30 Ga _0.70 As matrix are studied as a function of InAs mole fraction (x). Decreasing of x results in a sequential disappearance of bound electron and hole states in the QDs. There is a range of indium compositions were photoluminescence is determined by type-II optical transitions between electrons localized in a Al _0.3 Ga _0.7 As layer and holes localized in the QDs.

Original language	English
Pages (from-to)	381-384
Number of pages	4
Journal	Applied Surface Science
Volume	123-124
DOIs	https://doi.org/10.1016/S0169-4332(97)00493-5
Publication status	Published - Jan 1998
Externally published	Yes

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@article{139ebaf9b18042b7a9206986ff38da52,

title = "Optical properties of InAlAs quantum dots in an AlGaAs matrix",

abstract = " Structural and optical properties of In x Al 1-x As quantum dots (QD) embedded in an Al 0.30 Ga 0.70 As matrix are studied as a function of InAs mole fraction (x). Decreasing of x results in a sequential disappearance of bound electron and hole states in the QDs. There is a range of indium compositions were photoluminescence is determined by type-II optical transitions between electrons localized in a Al 0.3 Ga 0.7 As layer and holes localized in the QDs.",

keywords = "Molecular-beam epitaxy, Nanostructures, Photoluminescence, Quantum dots",

author = "Tsatsul'nikov, {A. F.} and Egorov, {A. Yu} and Kop'ev, {P. S.} and Kovsh, {A. R.} and Ledentsov, {N. N.} and Maximov, {M. V.} and Suvorova, {A. A.} and Ustinov, {V. M.} and Volovik, {B. V.} and Zhukov, {A. E.} and M. Grundmann and D. Bimberg and Alferov, {Zh I.}",

year = "1998",

month = jan,

doi = "10.1016/S0169-4332(97)00493-5",

language = "English",

volume = "123-124",

pages = "381--384",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Optical properties of InAlAs quantum dots in an AlGaAs matrix

AU - Tsatsul'nikov, A. F.

AU - Egorov, A. Yu

AU - Kop'ev, P. S.

AU - Kovsh, A. R.

AU - Ledentsov, N. N.

AU - Maximov, M. V.

AU - Suvorova, A. A.

AU - Ustinov, V. M.

AU - Volovik, B. V.

AU - Zhukov, A. E.

AU - Grundmann, M.

AU - Bimberg, D.

AU - Alferov, Zh I.

PY - 1998/1

Y1 - 1998/1

N2 - Structural and optical properties of In x Al 1-x As quantum dots (QD) embedded in an Al 0.30 Ga 0.70 As matrix are studied as a function of InAs mole fraction (x). Decreasing of x results in a sequential disappearance of bound electron and hole states in the QDs. There is a range of indium compositions were photoluminescence is determined by type-II optical transitions between electrons localized in a Al 0.3 Ga 0.7 As layer and holes localized in the QDs.

AB - Structural and optical properties of In x Al 1-x As quantum dots (QD) embedded in an Al 0.30 Ga 0.70 As matrix are studied as a function of InAs mole fraction (x). Decreasing of x results in a sequential disappearance of bound electron and hole states in the QDs. There is a range of indium compositions were photoluminescence is determined by type-II optical transitions between electrons localized in a Al 0.3 Ga 0.7 As layer and holes localized in the QDs.

KW - Molecular-beam epitaxy

KW - Nanostructures

KW - Photoluminescence

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=0031685716&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(97)00493-5

DO - 10.1016/S0169-4332(97)00493-5

M3 - Article

AN - SCOPUS:0031685716

SN - 0169-4332

VL - 123-124

SP - 381

EP - 384

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Optical properties of InAlAs quantum dots in an AlGaAs matrix

Abstract

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