Abstract
Photoluminescence (PL) properties of
In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As
quantum well (QW) grown on GaAs substrates by gas source molecular beam
epitaxy were studied by varying excitation power and temperature,
respectively. The type-II transition energy shifts from 1.149 eV to
1.192 eV when increasing the excitation power from 10 mW to 150 mW at
4.5 K, which was ascribed to the band-bending effect. On the other hand,
the type-II PL quenches quickly along with fast redshift with the
increasing temperature due to the relaxation of the band bending caused
by the thermal excitation process. An 8 band k.p model was used to
analyze the electronic properties and the band-bending effect in the
type-II QW. The calculated subband levels and transition energy fit well
with the experiment results, and two thermal activation energies of 8.7
meV and 50 meV, respectively, are deduced.
Original language | English |
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Article number | 105702 |
Pages (from-to) | 105702 |
Journal | Journal of Applied Physics |
Volume | 120 |
Issue number | 10 |
DOIs | |
Publication status | Published - 14 Sept 2016 |
Externally published | Yes |