Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

Wenwu Pan, Liyao Zhang, Liang Zhu, Yaoyao Li, Xiren Chen, Xiaoyan Wu, Fan Zhang, Jun Shao, Shumin Wang

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Photoluminescence (PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well (QW) grown on GaAs substrates by gas source molecular beam epitaxy were studied by varying excitation power and temperature, respectively. The type-II transition energy shifts from 1.149 eV to 1.192 eV when increasing the excitation power from 10 mW to 150 mW at 4.5 K, which was ascribed to the band-bending effect. On the other hand, the type-II PL quenches quickly along with fast redshift with the increasing temperature due to the relaxation of the band bending caused by the thermal excitation process. An 8 band k.p model was used to analyze the electronic properties and the band-bending effect in the type-II QW. The calculated subband levels and transition energy fit well with the experiment results, and two thermal activation energies of 8.7 meV and 50 meV, respectively, are deduced.
Original languageEnglish
Article number105702
Pages (from-to)105702
JournalJournal of Applied Physics
Volume120
Issue number10
DOIs
Publication statusPublished - 14 Sept 2016
Externally publishedYes

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