Optical and Structural Properties of CdTe Grown by Molecular Beam Epitaxy at Low Temperature for Resonant-Cavity-Enhanced HgCdTe Detectors

J.G.A. Wehner, Richard Sewell, Charles Musca, John Dell, Lorenzo Faraone

Research output: Contribution to journalArticle

Abstract

Investigation into resonant-cavity-enhanced (RCE) HgCdTe detectors has revealed a discrepancy in the refractive index of the CdTe layers grown by molecular beam epitaxy (MBE) for the detectors, compared with the reported value for crystalline CdTe. The refractive index of the CdTe grown for RCE detectors was measured using ellipsometry and matches that of CdTe with an inclusion of approximately 10% voids. X-ray measurements confirm that the sample is crystalline and strained to match the lattice spacing of the underlying Hg(1-x)Cd(x)Te, while electron diffraction patterns observed during growth indicate that the CdTe layers exhibit some three-dimensional structure. Secondary ion mass spectroscopy results further indicate that there is enhanced interdiffusion at the interface between Hg(1-x)Cd(x)Te and CdTe when the Hg(1-x)Cd(x)Te is grown on CdTe, suggesting that the defects are nucleated within the CdTe layers.
Original languageEnglish
Pages (from-to)877-883
JournalJournal of Electronic Materials
Volume36
Issue number8
DOIs
Publication statusPublished - 2007

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