Observation of persistent photoconductivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures using the whispering gallery mode method

John Hartnett, D. Mouneyrac, Jean-Michel Le Floch, J. Krupka, Michael Tobar, D. Cros

Research output: Contribution to journalArticle

6 Citations (Scopus)
237 Downloads (Pure)

Abstract

Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at cryogenics temperatures ≤50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900±0.081 and 1.098±0.063 ns, respectively, using this method
Original languageEnglish
Pages (from-to)online - approx 5-20pp
JournalJournal of Applied Physics
Volume104
Issue number11
DOIs
Publication statusPublished - 2008

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