Observation and characterization of memristive silver filaments in amorphous zinc-tin-oxide

Hiep N. Tran; Thomas J. Raeber; Zijun C. Zhao; David R. McKenzie; Anthony S. Holland; Dougal G. McCulloch; Billy J. Murdoch; Jim G. Partridge

doi:10.1557/mrc.2018.156

Observation and characterization of memristive silver filaments in amorphous zinc-tin-oxide

Hiep N. Tran, Thomas J. Raeber, Zijun C. Zhao, David R. McKenzie, Anthony S. Holland, Dougal G. McCulloch, Billy J. Murdoch, Jim G. Partridge

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Lateral memristors consisting of planar Ag electrodes (with sub-micrometer separation) supported on thin films of amorphous zinc-tin-oxide have been characterized. After an initial filament-forming process, each device exhibited volatile, resistive switching. In the low resistance state, the transport mechanism and conductance depended on prior activity and on the imposed current limit, mimicking biologic synaptic plasticity. Microscopic observations performed on each device revealed nanoscale filaments between the electrodes. These filaments were subject to Rayleigh instability and exhibited relaxation times determined by their effective radii. The relaxation times and on:off resistance ratios suggest suitability for threshold switching selector devices.

Original language	English
Pages (from-to)	1104-1110
Number of pages	7
Journal	MRS Communications
Volume	8
Issue number	3
DOIs	https://doi.org/10.1557/mrc.2018.156
Publication status	Published - 1 Sept 2018
Externally published	Yes

Access to Document

10.1557/mrc.2018.156

Cite this

@article{89f5d61d5bc04f16ac0011bc941ef0b0,

title = "Observation and characterization of memristive silver filaments in amorphous zinc-tin-oxide",

abstract = "Lateral memristors consisting of planar Ag electrodes (with sub-micrometer separation) supported on thin films of amorphous zinc-tin-oxide have been characterized. After an initial filament-forming process, each device exhibited volatile, resistive switching. In the low resistance state, the transport mechanism and conductance depended on prior activity and on the imposed current limit, mimicking biologic synaptic plasticity. Microscopic observations performed on each device revealed nanoscale filaments between the electrodes. These filaments were subject to Rayleigh instability and exhibited relaxation times determined by their effective radii. The relaxation times and on:off resistance ratios suggest suitability for threshold switching selector devices.",

author = "Tran, {Hiep N.} and Raeber, {Thomas J.} and Zhao, {Zijun C.} and McKenzie, {David R.} and Holland, {Anthony S.} and McCulloch, {Dougal G.} and Murdoch, {Billy J.} and Partridge, {Jim G.}",

year = "2018",

month = sep,

day = "1",

doi = "10.1557/mrc.2018.156",

language = "English",

volume = "8",

pages = "1104--1110",

journal = "MRS Communications",

issn = "2159-6859",

publisher = "Cambridge University Press",

number = "3",

}

TY - JOUR

T1 - Observation and characterization of memristive silver filaments in amorphous zinc-tin-oxide

AU - Tran, Hiep N.

AU - Raeber, Thomas J.

AU - Zhao, Zijun C.

AU - McKenzie, David R.

AU - Holland, Anthony S.

AU - McCulloch, Dougal G.

AU - Murdoch, Billy J.

AU - Partridge, Jim G.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Lateral memristors consisting of planar Ag electrodes (with sub-micrometer separation) supported on thin films of amorphous zinc-tin-oxide have been characterized. After an initial filament-forming process, each device exhibited volatile, resistive switching. In the low resistance state, the transport mechanism and conductance depended on prior activity and on the imposed current limit, mimicking biologic synaptic plasticity. Microscopic observations performed on each device revealed nanoscale filaments between the electrodes. These filaments were subject to Rayleigh instability and exhibited relaxation times determined by their effective radii. The relaxation times and on:off resistance ratios suggest suitability for threshold switching selector devices.

AB - Lateral memristors consisting of planar Ag electrodes (with sub-micrometer separation) supported on thin films of amorphous zinc-tin-oxide have been characterized. After an initial filament-forming process, each device exhibited volatile, resistive switching. In the low resistance state, the transport mechanism and conductance depended on prior activity and on the imposed current limit, mimicking biologic synaptic plasticity. Microscopic observations performed on each device revealed nanoscale filaments between the electrodes. These filaments were subject to Rayleigh instability and exhibited relaxation times determined by their effective radii. The relaxation times and on:off resistance ratios suggest suitability for threshold switching selector devices.

UR - http://www.scopus.com/inward/record.url?scp=85052638858&partnerID=8YFLogxK

U2 - 10.1557/mrc.2018.156

DO - 10.1557/mrc.2018.156

M3 - Article

AN - SCOPUS:85052638858

SN - 2159-6859

VL - 8

SP - 1104

EP - 1110

JO - MRS Communications

JF - MRS Communications

IS - 3

ER -

Observation and characterization of memristive silver filaments in amorphous zinc-tin-oxide

Abstract

Access to Document

Other files and links

Fingerprint

Cite this