Novel InGaPBi single crystal grown by molecular beam epitaxy

Li Yue, Peng Wang, Kai Wang, Xiaoyan Wu, Wenwu Pan, Yaoyao Li, Yuxin Song, Yi Gu, Qian Gong, Shumin Wang, Jiqian Ning, Shijie Xu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.
Original languageEnglish
Pages (from-to)41201
JournalApplied Physics Express
Issue number4
Publication statusPublished - 1 Apr 2015
Externally publishedYes


Dive into the research topics of 'Novel InGaPBi single crystal grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this