Abstract
InGaPBi crystalline thin films with up to 2.1% bismuth concentration
have been grown on GaAs substrates by molecular beam epitaxy. Rutherford
backscattering spectrometry confirms that the majority of Bi atoms are
located at substitutional lattice sites. The films exhibit good surface,
structural, and interface quality, and their strains can be tuned from
tensile to compressive by increasing the Bi content. InBi LO and GaBi LO
vibrational modes in Raman spectroscopy were observed, and their
intensities increased with Bi concentration. A weak photoluminescence
signal was observed at 1.78 eV at room temperature for the sample with a
Bi content of 0.5%.
Original language | English |
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Pages (from-to) | 41201 |
Journal | Applied Physics Express |
Volume | 8 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Apr 2015 |
Externally published | Yes |