Novel InGaPBi single crystal grown by molecular beam epitaxy

Li Yue; Peng Wang; Kai Wang; Xiaoyan Wu; Wenwu Pan; Yaoyao Li; Yuxin Song; Yi Gu; Qian Gong; Shumin Wang; Jiqian Ning; Shijie Xu

doi:10.7567/APEX.8.041201

Novel InGaPBi single crystal grown by molecular beam epitaxy

Li Yue, Peng Wang, Kai Wang, Xiaoyan Wu, Wenwu Pan, Yaoyao Li, Yuxin Song, Yi Gu, Qian Gong, Shumin Wang, Jiqian Ning, Shijie Xu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.

Original language	English
Pages (from-to)	41201
Journal	Applied Physics Express
Volume	8
Issue number	4
DOIs	https://doi.org/10.7567/APEX.8.041201
Publication status	Published - 1 Apr 2015
Externally published	Yes

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10.7567/APEX.8.041201

http://adsabs.harvard.edu/abs/2015APExp...8d1201Y

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title = "Novel InGaPBi single crystal grown by molecular beam epitaxy",

abstract = "InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.",

author = "Li Yue and Peng Wang and Kai Wang and Xiaoyan Wu and Wenwu Pan and Yaoyao Li and Yuxin Song and Yi Gu and Qian Gong and Shumin Wang and Jiqian Ning and Shijie Xu",

year = "2015",

month = apr,

day = "1",

doi = "10.7567/APEX.8.041201",

language = "English",

volume = "8",

pages = "41201",

journal = "Applied Physics Express",

issn = "1882-0778",

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TY - JOUR

T1 - Novel InGaPBi single crystal grown by molecular beam epitaxy

AU - Yue, Li

AU - Wang, Peng

AU - Wang, Kai

AU - Wu, Xiaoyan

AU - Pan, Wenwu

AU - Li, Yaoyao

AU - Song, Yuxin

AU - Gu, Yi

AU - Gong, Qian

AU - Wang, Shumin

AU - Ning, Jiqian

AU - Xu, Shijie

PY - 2015/4/1

Y1 - 2015/4/1

N2 - InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.

AB - InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.

U2 - 10.7567/APEX.8.041201

DO - 10.7567/APEX.8.041201

M3 - Article

VL - 8

SP - 41201

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 4

ER -

Novel InGaPBi single crystal grown by molecular beam epitaxy

Abstract

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