Novel Dilute InPBi for IR Emitters

Shumin Wang, Kai Wang, Yi Gu, Wenwu Pan, Xiaoyan Wu, Liyao Zhang, Yaoyao Li, Qian Gong

Research output: Chapter in Book/Conference paperConference paper

6 Citations (Scopus)

Abstract

InPBi crystalline thin films with a bismuth concentration up to 4.8% have been successfully grown using molecular beam epitaxy for the first time. This novel material reveals strong and broad photoluminescence in the wavelength range of 1 - 2.5 mu m at room temperature, although the absorption measurements point out a near band-gap absorption character. Various structural and optical characterization techniques are used to assess material quality and to understand the physical origins of the unexpected light emission. The InPBi is almost lattice matched to InP, making such a material very promising for InP based optoelectronics devices. The emitted light covers the telecom wavelength regime as well as other important wavelengths for gas sensing. The very broad emission spectrum of more than 600 nm promises for making super-luminescence IR diodes that have potentials to significantly enhance the spatial resolution in optical coherence tomography (OCT).

Original languageEnglish
Title of host publication2014 16TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON)
EditorsM Jaworski, M Marciniak
PublisherWiley-IEEE Press
Number of pages4
ISBN (Print)9781479956005
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event16th International Conference on Transparent Optical Networks (ICTON) - Graz, Austria
Duration: 6 Jul 201410 Jul 2014

Publication series

NameInternational Conference on Transparent Optical Networks-ICTON
PublisherIEEE
ISSN (Print)2162-7339

Conference

Conference16th International Conference on Transparent Optical Networks (ICTON)
CountryAustria
CityGraz
Period6/07/1410/07/14

Cite this