Abstract
Based on the ability of InxGa1-xN materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type InxGa1-xN with low indium contents and interfacing with graphene film (G/InxGa1-xN), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-InxGa1-xN showed relatively smaller short-circuits current (∼7 mA/cm2) and significantly higher open-circuit voltage (∼4 V) and efficiency (∼30%). The thickness, doping concentration, and indium contents of p-InxGa1-xN and graphene work function were found to substantially affect the performance of G/p-InxGa1-xN.
Original language | English |
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Article number | 194506 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 115 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2014 |