Novel attributes in modeling and optimizing of the new graphene based InxGa1-xN Schottky barrier solar cells

Z. Arefinia, A. Asgari

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Based on the ability of InxGa1-xN materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type InxGa1-xN with low indium contents and interfacing with graphene film (G/InxGa1-xN), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-InxGa1-xN showed relatively smaller short-circuits current (∼7 mA/cm2) and significantly higher open-circuit voltage (∼4 V) and efficiency (∼30%). The thickness, doping concentration, and indium contents of p-InxGa1-xN and graphene work function were found to substantially affect the performance of G/p-InxGa1-xN.
Original languageEnglish
Article number194506
Number of pages7
JournalJournal of Applied Physics
Volume115
Issue number19
DOIs
Publication statusPublished - 2014

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