Noise modeling in HgCdTe heterostructure devices

K. Jozwikowski, Richard Sewell, Charles Musca, John Dell, Lorenzo Faraone

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A numerical method to analyze noise generation in semiconductor devices and based on "transport equations for fluctuations" is presented. The spectral intensity of temperature fluctuations, fluctuations of background illumination, fluctuations of thermal g-r processes (including Auger, radiative, and S-R mechanisms) as well as fluctuations of electron and hole mobility were taken into account. Noise spectra of midwavelength HgCdTe heterostructure photoconductors were measured over a wide temperature range, and the numerical model was fitted to these data. The results of the numerical model show the spatial distributions and the relative contributions of each source of fluctuation to the total noise measured in the devices. (C) 2003 American Institute of Physics.
Original languageEnglish
Pages (from-to)6541-6548
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 2003


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