New design of a three-terminal memristor emulator

Zhi Zhou, Dongsheng Yu, Xiaoping Ma, Ciyan Zheng, He Cheng

Research output: Chapter in Book/Conference paperConference paper

1 Citation (Scopus)

Abstract

An emulator circuit is newly designed in this paper by making use of common off-The-shelf active devices for mimicking the dynamic behaviors of the three-Terminal memristors (3T-MRS). The theoretical calculation shows that the equivalent memductance of the 3T-MRS emulator can be flexibly controlled by imposing excitation voltage with different amplitude, frequency and duty cycle on the third terminal. For the purpose of testing the controllability and emulation performance of the proposed emulator, simulation investigation is carried out based on PSpice software. The simulation results show good agreement with theoretical analysis, which confirms that the memductance of this 3T-MRS emulator can be conveniently controlled and can be utilized for further investigating the dynamic behaviors of 3T-MRS.

Original languageEnglish
Title of host publicationProceedings of the 2017 12th IEEE Conference on Industrial Electronics and Applications (ICIEA)
Place of PublicationUnited States
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages813-817
Number of pages5
ISBN (Electronic)9781538621035
DOIs
Publication statusPublished - 8 Feb 2018
Event12th IEEE Conference on Industrial Electronics and Applications, ICIEA 2017 - Siem Reap, Cambodia
Duration: 18 Jun 201720 Jun 2017

Conference

Conference12th IEEE Conference on Industrial Electronics and Applications, ICIEA 2017
CountryCambodia
CitySiem Reap
Period18/06/1720/06/17

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