New design of a three-terminal memristor emulator

Zhi Zhou; Dongsheng Yu; Xiaoping Ma; Ciyan Zheng; He Cheng

doi:10.1109/ICIEA.2017.8282951

New design of a three-terminal memristor emulator

Zhi Zhou, Dongsheng Yu, Xiaoping Ma, Ciyan Zheng, He Cheng

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper

1 Citation (Scopus)

Abstract

An emulator circuit is newly designed in this paper by making use of common off-The-shelf active devices for mimicking the dynamic behaviors of the three-Terminal memristors (3T-MRS). The theoretical calculation shows that the equivalent memductance of the 3T-MRS emulator can be flexibly controlled by imposing excitation voltage with different amplitude, frequency and duty cycle on the third terminal. For the purpose of testing the controllability and emulation performance of the proposed emulator, simulation investigation is carried out based on PSpice software. The simulation results show good agreement with theoretical analysis, which confirms that the memductance of this 3T-MRS emulator can be conveniently controlled and can be utilized for further investigating the dynamic behaviors of 3T-MRS.

Original language	English
Title of host publication	Proceedings of the 2017 12th IEEE Conference on Industrial Electronics and Applications (ICIEA)
Place of Publication	United States
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	813-817
Number of pages	5
ISBN (Electronic)	9781538621035
DOIs	https://doi.org/10.1109/ICIEA.2017.8282951
Publication status	Published - 8 Feb 2018
Event	12th IEEE Conference on Industrial Electronics and Applications, ICIEA 2017 - Siem Reap, Cambodia Duration: 18 Jun 2017 → 20 Jun 2017

Conference

Conference	12th IEEE Conference on Industrial Electronics and Applications, ICIEA 2017
Country	Cambodia
City	Siem Reap
Period	18/06/17 → 20/06/17

Access to Document

10.1109/ICIEA.2017.8282951

Link to publication in Scopus

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Cite this

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title = "New design of a three-terminal memristor emulator",

abstract = "An emulator circuit is newly designed in this paper by making use of common off-The-shelf active devices for mimicking the dynamic behaviors of the three-Terminal memristors (3T-MRS). The theoretical calculation shows that the equivalent memductance of the 3T-MRS emulator can be flexibly controlled by imposing excitation voltage with different amplitude, frequency and duty cycle on the third terminal. For the purpose of testing the controllability and emulation performance of the proposed emulator, simulation investigation is carried out based on PSpice software. The simulation results show good agreement with theoretical analysis, which confirms that the memductance of this 3T-MRS emulator can be conveniently controlled and can be utilized for further investigating the dynamic behaviors of 3T-MRS.",

keywords = "Emulator, Memductance, Memristor, Three-Terminal",

author = "Zhi Zhou and Dongsheng Yu and Xiaoping Ma and Ciyan Zheng and He Cheng",

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Zhou, Z, Yu, D, Ma, X, Zheng, C & Cheng, H 2018, New design of a three-terminal memristor emulator. in Proceedings of the 2017 12th IEEE Conference on Industrial Electronics and Applications (ICIEA). IEEE, Institute of Electrical and Electronics Engineers, United States, pp. 813-817, 12th IEEE Conference on Industrial Electronics and Applications, ICIEA 2017, Siem Reap, Cambodia, 18/06/17. https://doi.org/10.1109/ICIEA.2017.8282951

New design of a three-terminal memristor emulator. / Zhou, Zhi; Yu, Dongsheng; Ma, Xiaoping; Zheng, Ciyan; Cheng, He.

Proceedings of the 2017 12th IEEE Conference on Industrial Electronics and Applications (ICIEA). United States : IEEE, Institute of Electrical and Electronics Engineers, 2018. p. 813-817.

Research output: Chapter in Book/Conference paper › Conference paper

TY - GEN

T1 - New design of a three-terminal memristor emulator

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AU - Yu, Dongsheng

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AB - An emulator circuit is newly designed in this paper by making use of common off-The-shelf active devices for mimicking the dynamic behaviors of the three-Terminal memristors (3T-MRS). The theoretical calculation shows that the equivalent memductance of the 3T-MRS emulator can be flexibly controlled by imposing excitation voltage with different amplitude, frequency and duty cycle on the third terminal. For the purpose of testing the controllability and emulation performance of the proposed emulator, simulation investigation is carried out based on PSpice software. The simulation results show good agreement with theoretical analysis, which confirms that the memductance of this 3T-MRS emulator can be conveniently controlled and can be utilized for further investigating the dynamic behaviors of 3T-MRS.

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