Abstract
This paper reports a temperature-dependent (10-280 K) photoluminescence
(PL) study of below-bandgap electron-hole recombinations and anomalous
negative thermal quenching of PL intensity in
InP1-xBix (x = 0.019 and 0.023). Four
PL features are well resolved by curve-fitting of the PL spectra, of
which the energies exhibit different temperature dependence. The
integral intensities of the two high-energy features diminish
monotonically as temperature rises up, while those of the two low-energy
features decrease below but increase anomalously above 180 K. A
phenomenological model is established that the residual electrons in the
final state of the PL transition transfer into nonradiative state via
thermal hopping, and the thermal hopping produces in parallel holes in
the final state and hence enhances the radiative recombination
significantly. A reasonable interpretation of the PL processes in InPBi
is achieved, and the activation energies of the PL quenching and thermal
hopping are deduced.
Original language | English |
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Article number | 051903 |
Pages (from-to) | 51903 |
Journal | Applied Physics Letters |
Volume | 110 |
Issue number | 5 |
DOIs | |
Publication status | Published - 30 Jan 2017 |
Externally published | Yes |