NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs

Chi-Woo Lee; Isabelle Ferain; Aryan Afzalian; Ran Yan; Nima Dehdashti; Pedram Razavi; Jean-Pierre Colinge; Jong Tae Park

doi:10.1016/j.microrel.2009.06.011

NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs

Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge, Jong Tae Park

School of Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Negative bias temperature instability (NBTI) and hot-carrier induced device degradation in accumulation-mode Pi-gate pMOSFETs have been studied for different fin widths ranging from 20 to 40 nm. The NBTI induced device degradation is more significant in narrow devices. This result can be explained by enhanced diffusion of hydrogen at the corners in multiple-gate devices. Due to larger impact ionization, hot-carrier induced device degradation is more significant in wider devices. Finally, hot-carrier induced device degradation rate is highest under stress conditions where V(Gs) = V(TH). (C) 2009 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	1044-1047
Number of pages	4
Journal	Microelectronics Reliability
Volume	49
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2009.06.011
Publication status	Published - 2009
Event	20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Arcachon, France Duration: 5 Oct 2009 → 9 Oct 2009

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10.1016/j.microrel.2009.06.011

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title = "NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs",

abstract = "Negative bias temperature instability (NBTI) and hot-carrier induced device degradation in accumulation-mode Pi-gate pMOSFETs have been studied for different fin widths ranging from 20 to 40 nm. The NBTI induced device degradation is more significant in narrow devices. This result can be explained by enhanced diffusion of hydrogen at the corners in multiple-gate devices. Due to larger impact ionization, hot-carrier induced device degradation is more significant in wider devices. Finally, hot-carrier induced device degradation rate is highest under stress conditions where V(Gs) = V(TH). (C) 2009 Elsevier Ltd. All rights reserved.",

keywords = "BIAS TEMPERATURE INSTABILITY, SOI MOSFETS, DEGRADATION, PERFORMANCE, DEPENDENCE",

author = "Chi-Woo Lee and Isabelle Ferain and Aryan Afzalian and Ran Yan and Nima Dehdashti and Pedram Razavi and Jean-Pierre Colinge and Park, {Jong Tae}",

year = "2009",

doi = "10.1016/j.microrel.2009.06.011",

language = "English",

volume = "49",

pages = "1044--1047",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Pergamon",

number = "9-11",

note = "20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ; Conference date: 05-10-2009 Through 09-10-2009",

}

TY - JOUR

T1 - NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs

AU - Lee, Chi-Woo

AU - Ferain, Isabelle

AU - Afzalian, Aryan

AU - Yan, Ran

AU - Dehdashti, Nima

AU - Razavi, Pedram

AU - Colinge, Jean-Pierre

AU - Park, Jong Tae

PY - 2009

Y1 - 2009

N2 - Negative bias temperature instability (NBTI) and hot-carrier induced device degradation in accumulation-mode Pi-gate pMOSFETs have been studied for different fin widths ranging from 20 to 40 nm. The NBTI induced device degradation is more significant in narrow devices. This result can be explained by enhanced diffusion of hydrogen at the corners in multiple-gate devices. Due to larger impact ionization, hot-carrier induced device degradation is more significant in wider devices. Finally, hot-carrier induced device degradation rate is highest under stress conditions where V(Gs) = V(TH). (C) 2009 Elsevier Ltd. All rights reserved.

AB - Negative bias temperature instability (NBTI) and hot-carrier induced device degradation in accumulation-mode Pi-gate pMOSFETs have been studied for different fin widths ranging from 20 to 40 nm. The NBTI induced device degradation is more significant in narrow devices. This result can be explained by enhanced diffusion of hydrogen at the corners in multiple-gate devices. Due to larger impact ionization, hot-carrier induced device degradation is more significant in wider devices. Finally, hot-carrier induced device degradation rate is highest under stress conditions where V(Gs) = V(TH). (C) 2009 Elsevier Ltd. All rights reserved.

KW - BIAS TEMPERATURE INSTABILITY

KW - SOI MOSFETS

KW - DEGRADATION

KW - PERFORMANCE

KW - DEPENDENCE

U2 - 10.1016/j.microrel.2009.06.011

DO - 10.1016/j.microrel.2009.06.011

M3 - Article

SN - 0026-2714

VL - 49

SP - 1044

EP - 1047

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11

T2 - 20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Y2 - 5 October 2009 through 9 October 2009

ER -

NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs

Abstract

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