Negative bias temperature instability (NBTI) and hot-carrier induced device degradation in accumulation-mode Pi-gate pMOSFETs have been studied for different fin widths ranging from 20 to 40 nm. The NBTI induced device degradation is more significant in narrow devices. This result can be explained by enhanced diffusion of hydrogen at the corners in multiple-gate devices. Due to larger impact ionization, hot-carrier induced device degradation is more significant in wider devices. Finally, hot-carrier induced device degradation rate is highest under stress conditions where V(Gs) = V(TH). (C) 2009 Elsevier Ltd. All rights reserved.
|Number of pages||4|
|Publication status||Published - 2009|
|Event||20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Arcachon, France|
Duration: 5 Oct 2009 → 9 Oct 2009