Nanoscale distribution of Bi atoms in InP1-xBix

Liyao Zhang, Mingjian Wu, Xiren Chen, Xiaoyan Wu, Erdmann Spiecker, Yuxin Song, Wenwu Pan, Yaoyao Li, Li Yue, Jun Shao, Shumin Wang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (-111) and (1-11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1-10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties.
Original languageEnglish
Article number12278
Pages (from-to)12278
JournalScientific Reports
Issue number1
Publication statusPublished - 1 Dec 2017
Externally publishedYes


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