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Abstract
This paper presents a study of the mechanical properties of Hg0.7Cd0.3Se grown via molecular beam epitaxy on GaSb (2 1 1)B substrates. By applying nanoindentation measurements, the statistical average values of Young's modulus and hardness of Hg0.7Cd0.3Se extracted from corresponding 43 effective load–displacement curves are determined to be approximately 51 GPa with 7.4 GPa standard deviation and 0.93 GPa with 0.05 GPa standard deviation, respectively. In response to increasing loading force, Hg0.7Cd0.3Se material is found to transition from purely elastic character to elasto-plastic behaviour, which is observed to be characterized by “pop-in” discontinuities in the recorded load-penetration curves and occurring at a shear stress of around 2.25 GPa. Compared to the mechanical properties of Hg0.7Cd0.3Te, Hg0.7Cd0.3Se is found to present more favorable hardness and plastic threshold shear stress from the point of view of robustness for device fabrication processing and possible integration with MEMS technology.
Original language | English |
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Article number | 104446 |
Journal | Infrared Physics and Technology |
Volume | 127 |
DOIs | |
Publication status | Published - Dec 2022 |
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ARC Centre of Excellence for Transformative Meta-Optical Systems
Martyniuk, M. (Investigator 01) & Faraone, L. (Investigator 02)
ARC Australian Research Council
1/01/21 → 31/12/28
Project: Research
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Defect generation in hetero-epitaxy on lattice mismatched substrates
Lei, W. (Investigator 01), Spagnoli, D. (Investigator 02) & Smith, D. (Investigator 03)
ARC Australian Research Council
1/01/20 → 31/12/22
Project: Research
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Bandgap engineered HgCdTe heterostructures on GaSb alternative substrates
Faraone, L. (Investigator 01), Lei, W. (Investigator 02) & Krishna, S. (Investigator 03)
ARC Australian Research Council
1/01/17 → 31/12/19
Project: Research