Nanoindentation of Hg0.7Cd0.3Se prepared by molecular beam epitaxy

Zekai Zhang; Wenwu Pan; Mariusz Martyniuk; Shuo Ma; Lorenzo Faraone; Wen Lei

doi:10.1016/j.infrared.2022.104446

Nanoindentation of Hg_0.7Cd_0.3Se prepared by molecular beam epitaxy

Zekai Zhang, Wenwu Pan, Mariusz Martyniuk, Shuo Ma, Lorenzo Faraone, Wen Lei

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a study of the mechanical properties of Hg_0.7Cd_0.3Se grown via molecular beam epitaxy on GaSb (2 1 1)B substrates. By applying nanoindentation measurements, the statistical average values of Young's modulus and hardness of Hg_0.7Cd_0.3Se extracted from corresponding 43 effective load–displacement curves are determined to be approximately 51 GPa with 7.4 GPa standard deviation and 0.93 GPa with 0.05 GPa standard deviation, respectively. In response to increasing loading force, Hg_0.7Cd_0.3Se material is found to transition from purely elastic character to elasto-plastic behaviour, which is observed to be characterized by “pop-in” discontinuities in the recorded load-penetration curves and occurring at a shear stress of around 2.25 GPa. Compared to the mechanical properties of Hg_0.7Cd_0.3Te, Hg_0.7Cd_0.3Se is found to present more favorable hardness and plastic threshold shear stress from the point of view of robustness for device fabrication processing and possible integration with MEMS technology.

Original language	English
Article number	104446
Journal	Infrared Physics and Technology
Volume	127
DOIs	https://doi.org/10.1016/j.infrared.2022.104446
Publication status	Published - Dec 2022

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10.1016/j.infrared.2022.104446

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@article{2390b625c3464814ae5182dc9f2907d1,

title = "Nanoindentation of Hg0.7Cd0.3Se prepared by molecular beam epitaxy",

abstract = "This paper presents a study of the mechanical properties of Hg0.7Cd0.3Se grown via molecular beam epitaxy on GaSb (2 1 1)B substrates. By applying nanoindentation measurements, the statistical average values of Young's modulus and hardness of Hg0.7Cd0.3Se extracted from corresponding 43 effective load–displacement curves are determined to be approximately 51 GPa with 7.4 GPa standard deviation and 0.93 GPa with 0.05 GPa standard deviation, respectively. In response to increasing loading force, Hg0.7Cd0.3Se material is found to transition from purely elastic character to elasto-plastic behaviour, which is observed to be characterized by “pop-in” discontinuities in the recorded load-penetration curves and occurring at a shear stress of around 2.25 GPa. Compared to the mechanical properties of Hg0.7Cd0.3Te, Hg0.7Cd0.3Se is found to present more favorable hardness and plastic threshold shear stress from the point of view of robustness for device fabrication processing and possible integration with MEMS technology.",

keywords = "Hardness, HgCdSe, Nanoindentation, Young's modulus",

author = "Zekai Zhang and Wenwu Pan and Mariusz Martyniuk and Shuo Ma and Lorenzo Faraone and Wen Lei",

note = "Funding Information: This work was supported by the Australian Research Council (DP200103188, DP170104562, CE200100010, and LE170100233). Facilities used in this work are supported by the WA node of the Australian National Fabrication Facility (ANFF), and the Centre for Microscopy, Characterization and Analysis (CMCA) at UWA. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = dec,

doi = "10.1016/j.infrared.2022.104446",

language = "English",

volume = "127",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier",

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T1 - Nanoindentation of Hg0.7Cd0.3Se prepared by molecular beam epitaxy

AU - Zhang, Zekai

AU - Pan, Wenwu

AU - Martyniuk, Mariusz

AU - Ma, Shuo

AU - Faraone, Lorenzo

AU - Lei, Wen

N1 - Funding Information: This work was supported by the Australian Research Council (DP200103188, DP170104562, CE200100010, and LE170100233). Facilities used in this work are supported by the WA node of the Australian National Fabrication Facility (ANFF), and the Centre for Microscopy, Characterization and Analysis (CMCA) at UWA. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/12

Y1 - 2022/12

N2 - This paper presents a study of the mechanical properties of Hg0.7Cd0.3Se grown via molecular beam epitaxy on GaSb (2 1 1)B substrates. By applying nanoindentation measurements, the statistical average values of Young's modulus and hardness of Hg0.7Cd0.3Se extracted from corresponding 43 effective load–displacement curves are determined to be approximately 51 GPa with 7.4 GPa standard deviation and 0.93 GPa with 0.05 GPa standard deviation, respectively. In response to increasing loading force, Hg0.7Cd0.3Se material is found to transition from purely elastic character to elasto-plastic behaviour, which is observed to be characterized by “pop-in” discontinuities in the recorded load-penetration curves and occurring at a shear stress of around 2.25 GPa. Compared to the mechanical properties of Hg0.7Cd0.3Te, Hg0.7Cd0.3Se is found to present more favorable hardness and plastic threshold shear stress from the point of view of robustness for device fabrication processing and possible integration with MEMS technology.

AB - This paper presents a study of the mechanical properties of Hg0.7Cd0.3Se grown via molecular beam epitaxy on GaSb (2 1 1)B substrates. By applying nanoindentation measurements, the statistical average values of Young's modulus and hardness of Hg0.7Cd0.3Se extracted from corresponding 43 effective load–displacement curves are determined to be approximately 51 GPa with 7.4 GPa standard deviation and 0.93 GPa with 0.05 GPa standard deviation, respectively. In response to increasing loading force, Hg0.7Cd0.3Se material is found to transition from purely elastic character to elasto-plastic behaviour, which is observed to be characterized by “pop-in” discontinuities in the recorded load-penetration curves and occurring at a shear stress of around 2.25 GPa. Compared to the mechanical properties of Hg0.7Cd0.3Te, Hg0.7Cd0.3Se is found to present more favorable hardness and plastic threshold shear stress from the point of view of robustness for device fabrication processing and possible integration with MEMS technology.

KW - Hardness

KW - HgCdSe

KW - Nanoindentation

KW - Young's modulus

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DO - 10.1016/j.infrared.2022.104446

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Nanoindentation of Hg_0.7Cd_0.3Se prepared by molecular beam epitaxy

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ARC Centre of Excellence for Transformative Meta-Optical Systems

Defect generation in hetero-epitaxy on lattice mismatched substrates

Bandgap engineered HgCdTe heterostructures on GaSb alternative substrates

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Nanoindentation of Hg0.7Cd0.3Se prepared by molecular beam epitaxy

Abstract

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ARC Centre of Excellence for Transformative Meta-Optical Systems

Defect generation in hetero-epitaxy on lattice mismatched substrates

Bandgap engineered HgCdTe heterostructures on GaSb alternative substrates

Cite this

Nanoindentation of Hg_0.7Cd_0.3Se prepared by molecular beam epitaxy