Nano-Indentation Characterisation Of PECVD Silicon Nitride Films

K.J. Winchester; John Dell

Nano-Indentation Characterisation Of PECVD Silicon Nitride Films

K.J. Winchester, John Dell

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)
Editors	Leonard D. Broekman, Brian F. Usher, John D. Riley
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	117-120
Volume	1
Edition	La Trobe University, Melbourne
ISBN (Print)	0780366980
Publication status	Published - 2002
Event	Nano-Indentation Characterisation Of PECVD Silicon Nitride Films - La Trobe University, Melbourne Duration: 1 Jan 2002 → …

Conference

Conference	Nano-Indentation Characterisation Of PECVD Silicon Nitride Films
Period	1/01/02 → …

Cite this

Winchester, K. J., & Dell, J. (2002). Nano-Indentation Characterisation Of PECVD Silicon Nitride Films. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000) (La Trobe University, Melbourne ed., Vol. 1, pp. 117-120). IEEE, Institute of Electrical and Electronics Engineers.

Winchester, K.J. ; Dell, John. / Nano-Indentation Characterisation Of PECVD Silicon Nitride Films. Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). editor / Leonard D. Broekman ; Brian F. Usher ; John D. Riley. Vol. 1 La Trobe University, Melbourne. ed. USA : IEEE, Institute of Electrical and Electronics Engineers, 2002. pp. 117-120

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title = "Nano-Indentation Characterisation Of PECVD Silicon Nitride Films",

author = "K.J. Winchester and John Dell",

year = "2002",

language = "English",

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volume = "1",

pages = "117--120",

editor = "Broekman, {Leonard D.} and Usher, {Brian F.} and Riley, {John D.}",

booktitle = "Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "La Trobe University, Melbourne",

note = "Nano-Indentation Characterisation Of PECVD Silicon Nitride Films ; Conference date: 01-01-2002",

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Winchester, KJ & Dell, J 2002, Nano-Indentation Characterisation Of PECVD Silicon Nitride Films. in LD Broekman, BF Usher & JD Riley (eds), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). La Trobe University, Melbourne edn, vol. 1, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 117-120, Nano-Indentation Characterisation Of PECVD Silicon Nitride Films, 1/01/02.

Nano-Indentation Characterisation Of PECVD Silicon Nitride Films. / Winchester, K.J.; Dell, John.
Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). ed. / Leonard D. Broekman; Brian F. Usher; John D. Riley. Vol. 1 La Trobe University, Melbourne. ed. USA: IEEE, Institute of Electrical and Electronics Engineers, 2002. p. 117-120.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

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BT - Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)

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PB - IEEE, Institute of Electrical and Electronics Engineers

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T2 - Nano-Indentation Characterisation Of PECVD Silicon Nitride Films

Y2 - 1 January 2002

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